A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide

Henning, J.P.; Przadka, A.; Melloch, M. R.; Cooper, James A.

doi:10.1109/55.887471

Cited by 19 publications

(15 citation statements)

References 7 publications

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“…As the electrons move further away from the emitter, the average velocity relaxes to the steady state value of 1. 6 10 cm/s for an electric field of 600 kV/cm. For higher values, the electric field as well as the velocity overshoot become substantially larger, and the difference in calculated collector current between DD and EMC further increases, since DD consistently underestimates the electron velocity in the channel.…”

Section: Discussionmentioning

confidence: 99%

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Physics-based modeling of submicron GaN permeable base transistors

Camarchia

Bellotti

Goano

et al. 2002

IEEE Electron Device Lett.

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We present the first physics-based nonstationary modeling of a submicron GaN permeable base transistor. Three different transport models are compared: drift-diffusion, energy balance, and ensemble Monte Carlo. Transport parameters and relaxation times used by the carrier transport equations are consistently derived from particle simulation. The current-voltage ( -) characteristics predicted with the energy balance model are in good agreement with those obtained from direct Monte Carlo device simulation. On the other hand, the drift-diffusion approach appears to be inadequate for the device under study, even if improved high-field mobility models are adopted.Index Terms-Gallium nitride, hydrodynamic models, Monte Carlo method, permeable base transistors, submicron vertical MESFETs.

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Section: Discussionmentioning

confidence: 99%

“…PBTs have been demonstrated on silicon [4], GaAs [5], and SiC [1], [6] for high frequency and high power applications; theoretical investigations include [2], [5], [7]- [9]. The present industrial effort toward the production of GaN PBTs must be supported by reliable modeling tools.…”

Section: Introductionmentioning

confidence: 99%

Physics-based modeling of submicron GaN permeable base transistors

Camarchia

Bellotti

Goano

et al. 2002

IEEE Electron Device Lett.

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“…The breakdown voltages reported here ignore possible problems related to the high threading dislocation density observed in hetero-epitaxial growth, but provide estimates for the limits of capabilities of the GaN material. In particular, the simulation results indicate that the breakdown voltages obtainable with the GaN SIT may be comparable to SiC SIT, [6,7] and still higher values may be obtained with the use of AlGaN. Fig.…”

Section: Effect Of Incorporation Of Alganmentioning

confidence: 74%

“…3. The dimensions of the device were selected to be similar to the values used for SiC and GaN devices [4,7] and a range of values for the source length was investigated. The source-to-gate spacing was adjusted to safely avoid breakdown in this region for the range of gate voltages used in this work.…”

Section: Methodsmentioning

confidence: 99%

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Simulation of GaN and AlGaN static induction transistors

Alptekin

Aktaş

2006

Solid-State Electronics

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GaN and AlGaN static induction transistors (SITs) are simulated using a two-dimensional self-consistent drift-diffusion simulator incorporating impact-ionization and self-heating effects. The results indicate that GaN SIT devices can have performance comparable to SiC SITs. As compared to GaN SITs, AlGaN SITs will have higher breakdown voltage but smaller maximum current. The power per unit gate width obtainable from GaN and AlGaN SITs are approximately the same, but the maximum power handling capacity of the AlGaN SIT is significantly higher due to bigger optimum load resistance. A comparison of the characteristics of GaN and AlGaN SITs with AlGaN/GaN HEMTs shows that the SIT devices have much lower cut-off frequency and smaller transconductance but can produce higher total output power.

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Static Induction Transistors

Napoli¹,

Strollo²

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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The transistor, due to its capability of controlling the current flow between two terminals with a low power control on the third terminal, has revolutionized many consumer fields and opened new application areas. Such success derives from the versatility of the various transistor devices to the application niches and to the fact that transistors are manufactured using high performance semiconductor materials that guarantee low cost, reduced size, and high reliability. In the field of power electronics, the power transistors take care of managing the energy flow. As a consequence, the improvement and the optimization of power transistors results in improved power management circuits with increased efficiency, reduced environmental pollution, reduced cost, reduced size, and longer battery life. Typical application areas of the power transistors are: automotive, traction, consumer electronics, air conditioning, electric engines. The Static Induction Transistor (SIT), together with its variants, is a transistor optimized for power electronics applications that has been developed for the past fourty years, for various ranges of voltages, and using different semiconductor materials. In this entry, the history and the characteristics of the SIT are reported.

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A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide

Cited by 19 publications

References 7 publications

Physics-based modeling of submicron GaN permeable base transistors

Physics-based modeling of submicron GaN permeable base transistors

Simulation of GaN and AlGaN static induction transistors

Static Induction Transistors

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