A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference

Abstract

A novel sensing algorithm for non-volatile Spin-Transfer Torque Magneto-resistive Random Access Memory (STT-MRAM) is presented. The dynamic reference sense amplifier (DRSA) improves sensing margin to achieve high reliability and sensitivity by increasing the difference of input voltages of sense amplifier. A dynamic reference sensing algorithm is proposed as a solution for the read margin loss due to variation in magnetic tunneling junction (MTJ) parameters of the STT-MRAM. The proposed sensing method was designed in standard 0.18 um process parameters, and simulation results indicate simultaneously increased the read margin compared with the conventional sensing method.

A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique

“…To overcome PVT variations and capacitive load in BL, many large-capacity non-volatile memories employ current-mode sense amplifiers (CSA) to achieve faster sensing than those using voltage-mode sense amplifiers (VSA) [6,7,8,9]. However, conventional CSAs are incapable of achieving low-VDD sensing for the reduced SM and the degraded sensing speed.…”