A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

Lou, C.L.; Chim, W. K.; Chan, D.S.H.; Tang, Pan

doi:10.1109/16.678559

Cited by 52 publications

(4 citation statements)

References 23 publications

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“…This fact hampers one's ability to extract their values independently of each other from measured characteristics. Several procedures have been suggested to get around this obstacle [1][2][3][4][5][6][7][8][9], in some cases from the saturation region and using devices with several channel lengths [10]. Another method was recently presented to extract these two parameters independently of each other by using bias conditions under which the channel carrier mobility is kept constant while extracting the source-and-drain series resistance [11].…”

Section: Introductionmentioning

confidence: 99%

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A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

Muci

Muñoz

Rey

et al. 2009

Semicond. Sci. Technol.

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A new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models. It also allows us to extract the device's channel conductance. The procedure is not based on fitting, but on directly calculating the three parameters by solving a system of three simultaneous equations. The equations represent the measured source-to-drain output resistance, obtained from the output characteristics, and its first and second integrals with respect to gate voltage. This method may be applied to a single device, measured in strong inversion as a function of gate voltage, at a small drain bias.

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Section: Introductionmentioning

confidence: 99%

“…where θ and n are the mobility degradation factor and degradation exponent due to the gate field, respectively. Substituting (5) in (1), and assuming a very small drain bias, V ds V gs − V T , V GS I D R DS /2, we may neglect the quadratic term in (1) and approximate (2) by V GS ≈ V gs , to get…”

Section: Introductionmentioning

confidence: 99%

A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

Muci

Muñoz

Rey

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…To date, a wide variety of methods for extracting R SD have been proposed. While some of them utilize, solely or additionally, RF or AC measurements, [17][18][19][20] majority of the methods try to extract R SD only using DC current versus voltage characteristics. Generally, since R SD is not directly measurable, these methods start from assuming some model (in a broad sense) that includes R SD as a parameter.…”

Section: Introductionmentioning

confidence: 99%

A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility

Takeuchi¹,

Mizutani²,

Saraya³

et al. 2022

Jpn. J. Appl. Phys.

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A simple MOSFET series resistance extraction method using multiple drain current vs. gate voltage curves of a single device is proposed, where mobility modulation by horizontal electric field (i.e., weak velocity saturation) is taken into account. The method is validated using TCAD, where series resistance determined from internal potential distributions was used as reliable reference. Measurement results were also obtained which further support the validity of the method.

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“…4(b), the R ext of the TG-SA coplanar a-IGZO TFT can be extracted not only by the DCCM but by the paired V GS -based TLM. However, because the R ext s are assumed to be the same in all TFTs with different L s in the paired V GS -based TLM, the extracted R ext from the paired V GS -based TLM is the averaged one of the TFTs with different L s. The DCCM was developed to extract the V GS -induced source and drain series resistance ( R ext,S and R ext,D ) in the lightly-doped-drain metal-oxide-semiconductor field-effect transistors 26 . It can extract the R ext,S and R ext,D separately by using the I D s and output conductances ( G D s) measured in the forward and reverse operation modes in the linear operation regime, respectively.…”

Section: Resultsmentioning

confidence: 99%

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

Hong

Kim

et al. 2019

Sci Rep

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We investigated the lateral distribution of the equilibrium carrier concentration ( n 0 ) along the channel and the effects of channel length ( L ) on the source-drain series resistance ( R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n 0 across the channel was extracted using the paired gate-to-source voltage ( V GS )-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different L s. n 0 abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n 0 was observed in the region near the middle of the channel. The effect of L on the R ext in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various L s. The increase of R ext was clearly observed with an increase in L especially at low V GS s, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high R ext are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs.

show abstract

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

Cited by 52 publications

References 23 publications

A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

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