2015 IEEE 11th International Conference on Power Electronics and Drive Systems 2015
DOI: 10.1109/peds.2015.7203566
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A novel single-switch series resonant converter for low power DC/DC energy conversion applications

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Cited by 3 publications
(1 citation statement)
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“…The process of power amplifier is considered as the inverter and is shunt capacitance is placed to maintain the high input power and maintains the efficiency and the power is added. The converter of CMOS technology (Suetsugu and Kazimierczuk, 2008) and the capacitor is used for reducing the power dissipation (Lee et al, 2010) the biasing part mentions the resistor at the gate used to reduce the power loss (Brama et al, 2008) the shunt capacitance is used to satisfy the condition of zero voltage and zero current and zero derivative switching for zero switching, low noise purpose (Deen et al, 2007) the reactance component used to realization of the dual broadband component in the rectifier and achieves the maximum of power current (Garcia et al, 2012) matching network in transmission line using microstrip lines for measuring the current values of developing the determinations used (Garcia et al, 2013) converts the power from RF power to DC power in the rectifier and determining the diode with high switching speed (Chuang et al, 2015) vs. is the switch voltage, Cj0 is the drain-to-source capacitance at vs equal to 0 and Vbi is the built-in potential of the MOSFET (Rivas et al, 2011) the rectifier process achieving developing the value of power and current voltage and input power is 0-9 mW is used.…”
Section: Introductionmentioning
confidence: 99%
“…The process of power amplifier is considered as the inverter and is shunt capacitance is placed to maintain the high input power and maintains the efficiency and the power is added. The converter of CMOS technology (Suetsugu and Kazimierczuk, 2008) and the capacitor is used for reducing the power dissipation (Lee et al, 2010) the biasing part mentions the resistor at the gate used to reduce the power loss (Brama et al, 2008) the shunt capacitance is used to satisfy the condition of zero voltage and zero current and zero derivative switching for zero switching, low noise purpose (Deen et al, 2007) the reactance component used to realization of the dual broadband component in the rectifier and achieves the maximum of power current (Garcia et al, 2012) matching network in transmission line using microstrip lines for measuring the current values of developing the determinations used (Garcia et al, 2013) converts the power from RF power to DC power in the rectifier and determining the diode with high switching speed (Chuang et al, 2015) vs. is the switch voltage, Cj0 is the drain-to-source capacitance at vs equal to 0 and Vbi is the built-in potential of the MOSFET (Rivas et al, 2011) the rectifier process achieving developing the value of power and current voltage and input power is 0-9 mW is used.…”
Section: Introductionmentioning
confidence: 99%