A novel SOI MESFET by reducing the electric field crowding for high voltage applications

Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer

“…The reliability issues related to oxidation can be avoided by using SiC MESFETs [1][2][3][4][5]. The most important desire for 4H-SiC MESFET is to improve the maximum output power density (P max ) and RF characteristics simultaneously.…”