Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer

Jia, Haiqiang; Zhang, Hang; Luo, Yehui; Zhou, Yang

doi:10.1016/j.mssp.2015.07.045

Cited by 9 publications

(3 citation statements)

References 15 publications

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“…The simulation results show that when the frequency was 1 GHz, the C gs values of the conventional HEMT and HGMRB HEMT were 2794.49 pF/mm and 2410.57 pF/mm, respectively, and the C gs value of the new structure was about 506 pF/mm lower than the conventional structure. Due to the existence of the high gate, when V gs = 0 V, the depletion region could only diffuse vertically downward [17], while the depletion region under the conventional structure gate diffused to both the source and the drain, and the capacitance area increased [18]. The simulation results show that the depth of the depletion region below the gate of the new structure was deeper than that of the conventional structure.…”

Section: Resultsmentioning

confidence: 99%

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Zhu

Jia

et al. 2019

Micromachines

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A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.

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Section: Resultsmentioning

confidence: 99%

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Zhu

Jia

et al. 2019

Micromachines

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“…And after the transconductance reaches the saturation region, as the gate voltage increased, the extension of the transconductance decreases. [22,23] The notch-structure HEMTs do have an improvement in the GVS. And the double-notch structure HEMT has a maximum GVS, which is a 30% improvement compared with the conventional HEMT.…”

Section: Transfer Characteristicsmentioning

confidence: 99%

“…The notch structure in the AlGaN barrier layer proves to reduce the concentration of the two-dimensional electron gas (2DEG) within the channel and also suppress the peak electric field beside the gate electrode. [18][19][20][21][22][23] The notch structure is achieved by an inductively coupled plasma (ICP) etching system at the AlGaN barrier layer, and the notch structure is parallel to the gate. In this work, the 5 types of notch-structure AlGaN/GaN HEMTs are compared with each other, and their structures to be investigated are named as follows: type-1 referring to the conventional AlGaN/GaN HEMT without a notch structure, type-2 denoting the notch-structure HEMT where the notch is next to the gate and has a depth of 10 nm, type-3 representing the notch-structure HEMT with the notch position being the same as the type-2 but a depth being 15 nm, type-4 being the notch-structure HEMT where the notch is 200 nm away from the gate and has a depth of 10 nm, type-5 signifying the notch-structure HEMT with the notch position being the same as the type-4 but the notch depth being 15 nm, and the type-6 meaning the double-notch structure HEMT where the left notch is 200 nm away from the gate and the right notch is 200 nm away from the left one and they have the same notch depth of 15 nm.…”

Section: Introductionmentioning

confidence: 99%

Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors*

Zou¹,

Yang²,

Ma³

et al. 2021

Chinese Phys. B

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The effects of various notch structures on direct current (DC) and radio frequency (RF) performances of AlGaN/GaN high electron mobility transistors (HEMTs) are analyzed. The AlGaN/GaN HEMTs, each with a 0.8-μm gate length, 50-μm gate width, and 3-μm source–drain distance in various notch structures at the AlGaN/GaN barrier layer, are manufactured to achieve the desired DC and RF characteristics. The maximum drain current (I ds,max), pinch-off voltage (V th), maximum transconductance (g m), gate voltage swing (GVS), subthreshold current, gate leakage current, pulsed I–V characteristics, breakdown voltage, cut-off frequency (f T), and maximum oscillation frequency (f max) are investigated. The results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing, a 42.2% improvement of breakdown voltage, and a 9% improvement of cut-off frequency compared with the conventional HEMT. The notch structure also has a good suppression of the current collapse.

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