Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Abstract

A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.

An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

“…Several models are activated, including the basic Poisson equations, Schrödinger–Poisson coupled equations, drift-diffusion equations, the Generation and Recombination model (SRH and Auger), the Incomplete ionization model and the Mobility model (Doping Dep, Enormal, and High Fieldsat). The criterion of breakdown was BreakCriteria {Current (Contact = “Drain” Absval = 1 × 10 −4 )}, and the others parameters are set by referring to the parameters in reference [ 12 ]. After simulation, these parameters are effective and practical.…”

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

“…17 The β-Ga 2 O 3 materials are becoming more appealing for power electronics applications due to their low cost, good native quality, and larger band gap. [17][18][19][20][21] The β-Ga 2 O 3 based HEMT can be a potential power device because of its high breakdown voltage and excellent transport properties. 22 The significant breakdown field is due to β-Ga 2 O 3 's large band gap of 4.6-4.9 eV.…”

SiC/Al4SiC4-Based Heterostructure Transistors

“…The density of interface states between Al 4 SiC 4 s and SiC might be reduced when compared to the density of the interface states between oxide-based dielectric layers and SiC due to the close matching of the lattice constants between the two materials. These heterostructure SiC/Al 4 SiC 4 transistors could compete with devices such as lateral SiC LD MOSFETs and AlGaN/GaN high-electron-mobility transistors (HEMTs) in high energy efficiency applications …”

“…The initial architecture is then scaled down to gate lengths of 2 and 1 μm to access the device potential to increase its performance by scaling, mainly to increase the switching speed by increasing transconductance . We have enlisted a conventional HEMT-like design with a 4H-SiC layer on the top of an Al 4 SiC 4 buffer layer to promote a creation of the 2D electron gas (2DEG) at the interface between the two materials. The transistor characteristics that are investigated are DC current–voltage ( I – V ) characteristics, transconductance, device breakdown, and a comparison between three devices scaled laterally.…”

“…The density of interface states between Al 4 SiC 4 s and SiC might be reduced when compared to the density of the interface states between oxide-based dielectric layers and SiC 8 due to the close matching of the lattice constants between the two materials. These heterostructure SiC/Al 4 SiC 4 transistors could compete with devices such as lateral SiC LD MOSFETs and AlGaN/GaN high-electron-mobility transistors (HEMTs) 9 in high energy efficiency applications. 10 The heterostructure SiC/Al 4 SiC 4 /SiC material system can allow tailoring the lowest electron ground state and the highest hole ground state in the Al 4 SiC 4 quantum well within the conduction and valence band offsets determined by the two band gaps of the two components of 2.78 and 3.4 eV by adjusting the width of the quantum well.…”