A novel solid state pulsed power module for excimer laser

Strowitzki, Claus; Zacharias, Peter; Seckl, P.

doi:10.1109/ipmhvc.2010.5958370

Cited by 4 publications

(3 citation statements)

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“…It consists of the parasitic inductance L σ , the gate resistor R G and the IGBT-input capacitance C IN (calculated for the primary side of the transformer). The total parasitic inductance is calculated as sum of the primary and the transferred secondary parasitic inductance according to (4). The whole circuit behaves as a second-order system which divides into the cases overcritical, undercritical and critical damped.…”

Section: Pulse Transformermentioning

confidence: 99%

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Design and comparison of IGBT-based switching modules for laser applications

Kluge

Gueldner

Trompa

et al. 2014

2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

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This paper presents the design of IGBT-based switching modules for a nitrogen gas laser. Cascades with a 11-cell series connections based on different IGBT-chips (1700 V and 1200 V) have been built up and measured. The focus of the design is the development of a high speed synchronous gate drive for the IGBT-gates. The module equipped with the four parallel 1200 V/35 A-IGBTs per cell produces the highest switching power. Among the variants, the peak switch current is up to 700 A at blocking voltages of up to 13.2 kV in the real environment of the nitrogen laser. The switch current slope reaches up to 30 A ns −1 and the laser tube current up to 1.8 kA.The variant with 1200 V/35 A-IGBTs produces an output energy which is about 15 % higher compared to the former MCT-based switch. Thus, the IGBT-based switches are able to replace the MCT-switches in this application. Between the different IGBTbased switches a tradeoff has to be done between high output energy and the effort for the assembly of the switch. 182978-1-4799-4047

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Section: Pulse Transformermentioning

confidence: 99%

“…This requires a compact pulse transformer with a low number of turns. Due to u < 1 the total parasitic inductance is dominated by the secondary parasitic inductance according to (4). Thus, the output windings have only one turn each.…”

Section: Pulse Transformermentioning

confidence: 99%

Design and comparison of IGBT-based switching modules for laser applications

Kluge

Gueldner

Trompa

et al. 2014

2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

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“…The discharge acts then as a short circuit and the remaining energy of the bank and inductivity is reflected to charge the bank to the opposite of the origin voltage. To avoid a second turn the diode blocks and the energy is kept in the bank [2]. Fig.…”

Section: Circuit Topologymentioning

confidence: 99%

A Novel Solid State Pulsed Power Module for Excimer Laser

Strowitzki

2009

Acta Phys. Pol. A

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For effective excimer laser pumping high voltage pulses with the pulse duration of 100 ns and energies from a fraction of joules to some 10 joules are necessary. For the generation of these pulses traditionally Thyratron circuits are used. The limited lifetime and repetition rates of such a device does not fulfil not the requirements of a modern excimer laser. State of the art is a solid state circuit with IGBT switches, high voltage pulse transformer and pulse compression networks. Due to the many stages, complexity is high and efficiency is moderate. To overcome this limitation a new solid state circuit for excimer laser pumping is developed. The circuit works without magnetic pulse compression. The switch is made by a stack of "off the self" MOSFETs and SiC diodes. In the presentation the general design and its calculation, diode and switch qualification and test results are presented.

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