A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

Lotfy, Kh.; Ahmed, Abdelaala; El-Bary, Alaa A.; Tantawi, Ramadan S.

doi:10.1007/s12633-022-02021-x

Cited by 7 publications

(2 citation statements)

References 40 publications

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“…In order to present numerical results in an effective way, a Silicon material was chosen for purposes of numerical evaluation, whose parameters in SI units are listed in Table 1 [46][47][48][49][50] .…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

A fully coupled system of generalized thermoelastic theory for semiconductor medium

Sherief,

Naim Anwar,

Abd El-Latief

et al. 2024

Sci Rep

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This study presents a new mathematical framework for analyzing the behavior of semiconductor elastic materials subjected to an external magnetic field. The framework encompasses the interaction between plasma, thermal, and elastic waves. A novel, fully coupled mathematical model that describes the plasma thermoelastic behavior of semiconductor materials is derived. Our new model is applied to obtain the solution to Danilovskaya’s problem, which is formed from an isotropic homogeneous semiconductor material. The Laplace transform is utilized to get the solution in the frequency domain using a direct approach. Numerical methods are employed to calculate the inverse Laplace transform, enabling the determination of the solution in the physical domain. Graphical representations are utilized to depict the numerical outcomes of many physical fields, including temperature, stress, displacement, chemical potential, carrier density, and current carrier distributions. These representations are generated for different values of time and depth of the semiconductor material. Ultimately, we receive a comparison between our model and several earlier fundamental models, which is then graphically represented.

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Section: Numerical Results and Discussionmentioning

confidence: 99%

A fully coupled system of generalized thermoelastic theory for semiconductor medium

Sherief,

Naim Anwar,

Abd El-Latief

et al. 2024

Sci Rep

View full text Add to dashboard Cite

show abstract

“…In the ideal situations, the thermal shock issue is deterministic, while in the real cases, some noises are present in the context of photo-excitation processes. Lotfy [27] investigated a theoretical method to study the distortion exposed by skewed loads. Sharma and Kumar [28] constructed a dynamic mathematical model for a semiconductor medium.…”

mentioning

confidence: 99%

Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model

Abouelregal

Sedighi

Eremeyev

2022

Continuum Mech. Thermodyn.

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This article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore-Gibson-Thompson (MGT) equation of the fourth-order serves as the theoretical framework to establish the photothermal model. It is well-known that the optical and heat transfer properties of such materials behave as random functions of photoexcited-carrier density; therefore, the current model is remarkably more reliable compared to the earlier closed-form theories which are limited to a single form. The constructed theoretical framework is able to investigate the magneto-photothermoelastic problems in a semiconductor medium due to laser pulse excitation as a case study. Some parametric studies are used to exhibit the impact of thermal parameters, electromagnetic fields, laser pulses and thermoelectric coupling factors on the thermomagnetic behavior of physical variables. Finally, several numerical examples have been presented to draw the distributions of the examined field variables.

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Photothermal impacts induced by laser pulse in a 2D semiconducting medium with temperature-dependent properties under strain–temperature rate-dependent theory

Tayel,

Mohammed

2024

Journal of Science: Advanced Materials and Devices

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A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

Cited by 7 publications

References 40 publications

A fully coupled system of generalized thermoelastic theory for semiconductor medium

A fully coupled system of generalized thermoelastic theory for semiconductor medium

Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model

Photothermal impacts induced by laser pulse in a 2D semiconducting medium with temperature-dependent properties under strain–temperature rate-dependent theory

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