A novel technique under the impact of stochastic heating due to the thermal effect of photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one-dimensional elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic numerical simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) the main physical quantities along different sample paths graphically and discussed.

A novel technique under the effect of stochastic heating due to the thermal effect of the photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the non-local semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one dimension (1D) according to the elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields in linearity form. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) of the main physical quantities along different sample paths graphically and discussed for the non-local silicon semiconductor material.

This paper investigates an uncommon technique by using the influence of the random function (Weiner process function), on a two-temperature problem, at the free surface of the semiconducting medium, by using the photo-thermoelasticity theory. Using the Silicon material as an example of a semiconducting medium under the influence of a magnetic field, the novel model can be formulated. To make the problem more logical, the randomness of the Weiner process function is aged to the governing stochastic equation. A combining stochastic process with the boundary of the variables is studied. In this case, the stochastic and deterministic solutions were obtained for all physical quantities. The additional noise is regarded as white noise. The problem is investigated according to a two-dimensional (2D) deformation. The normal mode method can be used mathematically to obtain numerically the deterministic, stochastic, and variance solutions of all physical quantities. Three sample paths are obtained by making a comparison between the stochastic and deterministic distributions of the field variables. The impacts of adding randomization to the boundary conditions are highlighted. The numerical results are shown graphically and discussed in consideration of the two-temperature parameter effect.

A unique methodology due to the effect of stochastic heating is utilized to study the Moisture Diffusivity influence of an elastic semiconductor medium under the effect of photo-thermoelasticity theory. Accurately, random processes are applied at the boundary of the semiconductor medium. The governing equations are expressed in the one-dimensional form (1D). The boundary conditions are considered random; the additional noise is regarded as white noise. The problem is set up to investigate the interaction between moisture diffusivity, thermo-elastic waves, and plasma waves. The investigation is carried out during a photothermal transport procedure while taking moisture diffusivity into consideration. The Laplace transform is used to solve the problem. The numerical solution for field distribution is obtained using the short-time approximation while performing inverse transformations of Laplace. The Wiener process notion has been used to arrive at the solutions for the stochastic case. Silicon (Si) material is used along several sample paths in a numerical study based on stochastic simulation. Additionally, a comparison of the stochastic and deterministic field variable distributions is provided. The effects of thermoelectric, thermoelastic, and reference moisture parameters of the applied force on all physical distributions are discussed graphically.