A Novel System for Systematic Microwave Noise and DC Characterization of Terahertz Schottky Diodes

Biber, S.; Cojocari, Oleg; Rehm, G.; Mottet, B.; Rodrı́guez-Gironés, M.; Schmidt, Lorenz-Peter; Hartnagel, H.L.

doi:10.1109/tim.2003.820487

Cited by 7 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to complete the characterization of the Schottky interface quality of our devices, an IF-noise measurement was performed. Using the IF-noise measurement set-up designed recently and described in another paper [17], an excellent IFnoise temperature of 250 K at 4.8 GHz up to 280 K at 2.1 GHz at a current bias up to 3 mA of a non-cooled planar structures was obtained.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Cojocari

Mottet

Rodrı́guez-Gironés

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper presents the evaluation of a Schottky contact technology based on electrochemical metal deposition. The results of a long-term systematic investigation and optimization of the anode formation process to improve the yield and performance of Schottky-based GaAs mixer diodes are detailed. Surface preparation prior to the Schottky-metal deposition and anode metallization as previously optimized for whisker-contacted diodes are successfully transferred to the fabrication of planar structures. This uses an auxiliary honeycomb array of anode-like structures called 'dummy anodes', which are processed simultaneously with the real anodes and then removed in the later technological processes. Consequently, the scattering of planar diodes electrical parameters is significantly reduced and the yield of the fabrication process increases from about 5% up to about 50%. Very good dc characteristics such as series resistance (R s ) below 8 , ideality factor (η) below 1.2 and saturation current (I sat ) of the order of 10 −17 A are achieved for the anode diameter as small as 1 µm. An excellent IF-noise figure of 250 K at 4.8 GHz up to 280 K at 2.1 GHz with current bias up to 3 mA is obtained for non-cooled THz mixer planar diodes. The use of this technological approach has enabled the extraction of statistically significant data which have been used to characterize the criticality of each step of the fabrication process on the device performance.

show abstract

Section: Resultsmentioning

confidence: 99%

“…Metal deposition is controlled using different parameters such as the electrolyte concentration and temperature of the bath, pulse width, period and amplitude, sample size and impedance [12,13]. This method gives good repeatable results with respect to dc and RF performances of these devices [3,14].…”

Section: Introductionmentioning

confidence: 99%

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Cojocari

Mottet

Rodrı́guez-Gironés

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Au Aue th d R R (8) In case of THz Schottky diodes the micromachining approach allowed a twofold optimization process with respect to technology development and device design improvement for parasitic capacitance reduction. The introduced model with its intrinsic and extrinsic part allows future use of commercial RF design tools for circuit development.…”

Section: Methodsmentioning

confidence: 99%

RF and Thermal Design of Compound Semiconductor Devices using MEMS Approach

Mottet¹,

Sydlo²,

Mutamba³

et al. 2005

Frequenz

Self Cite

View full text Add to dashboard Cite

The optimisation of devices RF and thermal properties is challenging the designer. Driving compound semiconductor devices to THz frequencies requires dedicated design features in the same way as they require optimised heatsinking capabilites. Both requirements can be met using MEMS approaches with membrane technologies. Benefits of this technology are shown with a 60 GHz power sensor resulting in higher sensitivity, a THz capable Schottky diode foreseen to operate at 600 GHz and an integrated 1 THz emitter based on optical heterodyning. Close interaction between device technology and RF device simulation is essential for the development of reliably operating devices at these frequencies.

show abstract

“…However, microwave-noise measurement was performed using set-up described in [13]. However, microwave-noise measurement was performed using set-up described in [13].…”

Section: B)mentioning

confidence: 99%

Design and Characterization of Schottky-Structures for THz-Applications

Cojocari¹,

Oprea²,

Sydlo³

et al. 2007

Frequenz

Self Cite

View full text Add to dashboard Cite

This work presents results of systematically performed optimizations of a quasi-vertical Schottky-structure for THz-applications. Three versions of structure-design based on a quasi-vertical concept were successfully fabricated and characterized. The first-developed anti-parallel mixer-diode pair demonstrated high performance at frequencies below 200GHz. Excellent power-sensitivity was attained of a single-diode structure fabricated with the second design-version. Microwave-noise measurements of such a structure revealed typical values of the junction noise-temperature to be lower than 300K at frequencies between 2.1GHz and 4.8GHz and at a bias current up to 3mA. Low-frequency noise of these diodes is normally about 4µV/Hz 1/2 at 1Hz. Typical DCcharacteristics of the third design-version result in a calculated cut-off frequency of up to 20THz. These structures demonstrated state-of-the-art mixer performance at millimeter waves.

show abstract

A Novel System for Systematic Microwave Noise and DC Characterization of Terahertz Schottky Diodes

Cited by 7 publications

References 7 publications

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

RF and Thermal Design of Compound Semiconductor Devices using MEMS Approach

Design and Characterization of Schottky-Structures for THz-Applications

Contact Info

Product

Resources

About