A novel technique for the deposition of aluminium-doped zinc oxide films

Kelly, Peter; Zhou, Yanwen; Postill, A.

doi:10.1016/s0040-6090(02)01332-9

Cited by 51 publications

(19 citation statements)

References 15 publications

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“…The ZnO : Al and CIS coatings were both deposited in a rig specifically designed for powder target use. 13 A single 180 mm dia. unbalanced magnetron was installed in the base plate of the chamber in the 'sputter up' configuration.…”

Section: Methodsmentioning

confidence: 99%

“…This unit, which is also an asymmetric bipolar supply, can operate at pulse frequencies of up to 350 kHz at duties in the range 50 -100%. The glass substrates were rf sputter cleaned prior to deposition (see Kelly et al 13 and Zhou et al 14 for full run details). The coatings were subsequently analysed by SEM, EPMA and XRD.…”

Section: Methodsmentioning

confidence: 99%

“…13,14 Thin film photovoltaic devices based on CIS These have demonstrated exceptional energy conversion efficiencies and a high tolerance to radiation damage. The opto-electronic properties of this complex material are a function of its defect structure and therefore the material growth parameters.…”

Section: Low Friction Tin Coatingsmentioning

confidence: 99%

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Advanced Coatings through Pulsed Magnetron Sputtering

Kelly¹,

Hisek²,

Zhou³

et al. 2004

Surface Engineering

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Pulsed magnetron sputtering (PMS) has become established as the process of choice for the deposition of dielectric materials for many applications. The process is attractive because it offers stable arc free operating conditions during the deposition of, for example, functional films on architectural and automotive glass, or antireflective/antistatic coatings on displays. Recent studies have shown that pulsing the magnetron discharge also leads to hotter and more energetic plasmas in comparison with continuous dc discharges, with increased ion energy fluxes delivered to the substrate. As such, the PMS process offers benefits in the deposition of a wide range of materials. The present paper describes three examples where PMS has led to either significant enhancement in film properties or enhanced process flexibility: in low friction titanium nitride coatings, in Al doped zinc oxide transparent conductive oxide coatings sputtered directly from powder targets and in thin film photovoltaic devices based on copper (indium/gallium) diselenide. These examples demonstrate the versatility of PMS and open up new opportunities for the production of advanced coatings using this technique.SE/499The authors are in the School of Computing Science and Engineering, University of Salford, Salford M5 4WT, UK (p.Kelly@salford.ac.uk). Based on a presentation at the meeting on 'Pulsed plasma processing' held at Salford

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Advanced Coatings through Pulsed Magnetron Sputtering

Kelly¹,

Hisek²,

Zhou³

et al. 2004

Surface Engineering

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“…There was a previous report on bipolar pulsed DC magnetron sputtering deposition of AZO thin films [12,[22][23][24]. However, reports on bipolar pulsed DC magnetron sputtering deposition of IZO thin films are hard to find.…”

Section: Introductionmentioning

confidence: 99%

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

et al. 2008

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Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8× 10 −3 Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV-visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are E 2 low , E 2 high , and A 1 modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.

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“…However, these properties depend strongly on the deposition process and parameters [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. To understand the relationships between these deposition parameters and the resulting properties requires detailed structural analysis of the films.…”

Section: Introductionmentioning

confidence: 99%