A Novel Ternary CoFe2O4/CuO/CoFe2O4 as a Giant Magnetoresistance Sensor

Abstract

Abstract. This paper reports the results of a study relating to the synthesis of a novel ternary CoFe 2 O 4 /CuO/CoFe 2 O 4 thin film as a giant magnetoresistance (GMR) sensor. The CoFe 2 O 4 /CuO/CoFe 2 O 4 thin film was prepared onto silicon substrate via DC magnetron sputtering with the targets facing each other. X-ray diffraction was used to determine the structure of the thin film and a 4-point method was used to measure the MR ratio. The GMR ratio is highly dependent on the ferrimagnetic (CoFe 2 O 4 ) and nonmagnetic (CuO) layer thickness. The maximum GMR ratio at room temperature obtained in the CoFe 2 O 4 /CuO/CoFe 2 O 4 thin film was 70% when the CoFe 2 O 4 and the CuO layer had a thickness of 62.5 nm and 14.4 nm respectively.