A novel time register with process and temperature calibration

Panetas-Felouris, Orfeas; Vlassis, S.

doi:10.1109/mocast52088.2021.9493414

Cited by 8 publications

(2 citation statements)

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“…In the following section, the performance of the proposed circuits is presented. All circuits are designed and verified by simulation in Samsung 28 nm FD-SOI CMOS technology with a supply voltage V DD = 1 V. The voltage triple point of comparator was adjusted to be 0.5 V using an appropriate triple-point compensation circuitry [15]. Considering that the input pulse width T in is varied as a sinusoid, the maximum allowable peak-to-peak amplitude T in.pp.aval can theoretically be equal to T CLK , which is equal to 50 ns in our implementation.…”

Section: Resultsmentioning

confidence: 99%

“…Our work proposes the implementation of a 3rd order sampled-data low pass timemode FIR filter which is based on the novel time-mode multiplier and time-mode adder. Both circuits are based on the modification of a simple time register topology [15,16]. A 3rd order low-pass topology offers a satisfactory trade off between high-frequency rejection, chip area and current consumption.…”

Section: Introductionmentioning

confidence: 99%

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A 3rd-Order FIR Filter Implementation Based on Time-Mode Signal Processing

Panetas-Felouris

Vlassis

2022

Electronics

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This paper presents the hardware implementation of a 3rd-order low-pass finite impulse response (FIR) filter based on time-mode signal processing circuits. The filter topology consists of a set of novel building blocks that perform the necessary functions in time-mode including z−1 operation, time addition and time multiplication. The proposed time-mode low-pass FIR filter was designed in a 28 nm Samsung fully-depleted silicon-on-insulator FD-SOI process under 1 V supply voltage with 5 MHz sampling frequency. Simulation results validate the theoretical analysis. The FIR filter achieves a signal-to-noise-plus-distortion ratio (SNDR) of 38.6 dB at the input frequency of 50 KHz consuming around 200 μW.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%