A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio

Zhao, Yang; Wu, Chunlei; Huang, Qianqian; Chen, Cheng; Zhu, Jian‐Gang; Guo, Lingyi; Jia, Rundong; Lv, Zhu; Yang, Yuchao; Li, Ming; Huang, Ru

doi:10.1109/led.2017.2679031

Cited by 44 publications

(20 citation statements)

References 9 publications

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“…Due to the lack of experimental data available for InAs/GaAs based TFET, we calibrated the simulation models of our proposed device with the information extracted from a fabrication‐based research work, 27 in order to authenticate the model parameters and the device measurements. We deliberated all the device parameters and biasing conditions of our device exactly the same as that of the published results reported in Zhao et al, 27 for the calibration purpose. Figure 1B illustrates the comparison of the I d V g characteristics obtained from the extracted data of the experimental work 27 and our simulations.…”

Section: Model Validationmentioning

confidence: 99%

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor

Sharma

Chaujar

2022

Circuit Theory & Apps

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This paper proposes a dual metal gate, hetero-material tunneling interfaced junctionless tunnel field effect transistor (TFET), (DMG-HJLTFET), utilizing III-V compound semiconducting materials, InAs (low band-gap source material)/GaAs (higher band-gap channel and drain material) by applying the band-gap and dual material gate engineering. The 2-D TCAD simulations have been executed to explore the impact of tunnel gate process variations-work function and length on DC and analog figure of merits (FOMs) of DMG-HJLTFET. The extracted result parameters have also been compared to SMG (single metal gate)-HJLTFET and conventional Si-JLTFET. The DMG-HJLTFET attains improved ON current in the range of 88.5 Â 10 À6 A/μm and OFF current remains as low as 2.89 Â 10 À16 A/μm. It exhibits a high current switching ratio of 3.1 Â 10 11 as compared to SMG-HJLTFET (I ON = 24 Â 10 À6 A/μm and I ON /I OFF = 1.4 Â 10 11 ) and Si-JLTFET (I ON = 7 Â 10 À6 A/μm and I ON /I OFF = 1.8 Â 10 6 ). Further, the radio frequency/microwave (RF) parameters such as power gains (h 12 , UPG, and Gma), f max , and GBP have been compared for all three aforementioned devices. Moreover, the small signal admittance (Y) parameters have been examined to explore the possible scope of DMG-HJLTFET for future internet of everything communications and fast switching applications.

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Section: Model Validationmentioning

confidence: 99%

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor

Sharma

Chaujar

2022

Circuit Theory & Apps

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“…TFETs have been implemented in a wide range of very different device architectures and material systems [58]- [60]. The most successful demonstrations have been those that can achieve both accurate material control of the III-V heterostructure, and a scaled channel with strong electrostatic control.…”

Section: Iii-v Tunneling Field-effect Transistorsmentioning

confidence: 99%

III-V-on-Si transistor technologies: Performance boosters and integration

Caimi

Schmid

Morf

et al. 2021

Solid-State Electronics

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“…Benchmarking based on Si- and III–V-based state-of-the-art TFET devices with data published by various research groups. We have chosen to use data for SS vs I DS per unit width for both n-TFET (denoted by circle with solid line) and p-TFET (denoted by diamond with solid line) devices which have shown SS near or less than thermal limit (60 mV/dec) at room temperature. ,,,− …”

Section: Transition From Mosfets To Energy-efficient Tfet Devicesmentioning

confidence: 99%

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Nazir

Rehman

Park

2020

ACS Appl. Mater. Interfaces

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Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal−oxide−semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.

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A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio

Cited by 44 publications

References 9 publications

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor

III-V-on-Si transistor technologies: Performance boosters and integration

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

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