A numerical simulation study for the effect of magnetic fields in liquid phase diffusion growth of SiGe single crystals

Yildiz, Emine; Dost, S.; Yıldız, Mehmet

doi:10.1016/j.jcrysgro.2006.03.040

Cited by 31 publications

(43 citation statements)

References 28 publications

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“…As seen from the thermal analysis [20], the outer region of the melt remains hotter than the inside until the melt reaches a thermal steady--state. Therefore, it is estimated intuitively that the thermal characteristic of the present system (melt being hotter near the crucible vertical wall) leads to a convective ow in the melt with two convection cells (symbolic representation of natural convection) circulating upward along the wall and downward in the centre (just opposite to what was observed in the LPD growth of SiGe in [14,16,17]), as shown schematically in Fig. 9b.…”

Section: Resultsmentioning

confidence: 80%

“…This time the furnace was placed inside the bore of 1.25 T superconducting magnet. The vertical magnetic eld chosen for these experiments was 0.8 T. This eld strength was chosen based upon previous numerical work using the magnetic eld to suppress convection [16,17], and was considered sucient to provide the required suppression in the Ge melt. The crucible, when in the 1100…”

Section: Methodsmentioning

confidence: 99%

“…To address this issue we have utilized a solution growth technique called LPD, and grown SiGe seed single crystals from the germanium side with varying silicon compositions up to 16% (for detail, see [14,16,17,2226]). In this section, we want to examine the eects of applied magnetic elds on silicon transport in the SiGe growth melt.…”

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

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Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Armour

Dost

2013

Acta Phys. Pol. A

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The silicon transport in a silicongermanium melt has been studied to address the issues of melt replenishment and seed production for the Czochralski growth of silicon germanium (SiGe) crystals. The growth of SiGe single crystals by the Czochralski method requires that the melt be replenished with silicon during the growth process due to the rejection of germanium into the melt during solidication. To facilitate the replenishment of the melt, an accurate knowledge of the dissolution rate of silicon into the melt and its transport through the melt is required. To address these issues, a number of experiments have been carried out on the dissolution of silicon into a germanium melt. Liquid phase diusion growth experiments were also conducted for insight into transport and as a possible method for seed crystal production. The experiments encompassed various temperatures, crucible geometries, crucible translation, and magnetic eld levels to determine optimum conditions for the most favorable dissolution rates and mass transport in the melt. Results have shown that replenishment from bottom of the crucible is most eective due to the enhanced silicon transport by buoyancy. The application of magnetic elds may also provide an eective mean to control the replenishment rate (mass transport rate) in the melt.

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Section: Resultsmentioning

confidence: 80%

Section: Methodsmentioning

confidence: 99%

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

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Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Armour

Dost

2013

Acta Phys. Pol. A

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“…3 is assumed incompressible, steady-state and fully developed turbulent flow. The governing equations for the fluid flow through the tube are the continuity, momentum and energy equations and the k-ε twoequation turbulent model equations (Yildiz et al 2006), (Vikram et al 2010), (Mehmet and Tiirkan, 1997). These governing equations in cylindrical coordinates (r,  , x) are expressed as follows: …”

Section: Fluid Flow Through the Absorber Tube Modelmentioning

confidence: 99%

“…The turbulent flow of the heat transfer fluid in the absorber tube model is modelled using the k-ε two-equation turbulence model obtained from the Navier-Stokes equation (Yildiz et al 2006). The k-ε two-equation turbulence model is expressed as follows: The diffusion coefficient, Γ φ , corresponding to the conservation variable φ (i.e.…”

Section: Turbulence Model Equationmentioning

confidence: 99%

Influence of circumferential solar heat flux distribution on the heat transfer coefficients of linear Fresnel collector absorber tubes

2014

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The absorber tubes of solar thermal collectors have enormous influence on the performance of the solar collector systems. In this numerical study, the influence of circumferential uniform and non-uniform solar heat flux distributions on the internal and overall heat transfer coefficients of the absorber tubes of a linear Fresnel solar collector was investigated. A 3D steady-state numerical simulation was implemented based on ANSYS

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Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

Armour

Dost

2010

Cryst. Res. Technol.

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Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples.

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A numerical simulation study for the effect of magnetic fields in liquid phase diffusion growth of SiGe single crystals

Cited by 31 publications

References 28 publications

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Influence of circumferential solar heat flux distribution on the heat transfer coefficients of linear Fresnel collector absorber tubes

Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

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