A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process

Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate

“…In this study, it is possible that for the growth at p TBAs ¼ 0:04 mbar, in the higher temperature range from 625 to 700 1C, the GaAs growth is controlled by MMGa [3][4][5] and the dominant surface reconstruction for (1 0 0) GaAs is b2(2 Â 4), which exhibits smaller E a (o4 kJ/mol) of k s . In the lower temperature range 550-625 1C, the growth is mainly determined by the reaction of TMGa on c(4 Â 4) reconstruction surface, which has larger E a (87.9 kJ/mol) of k s .…”

“…Understanding and controlling the MOVPE process is very important to improve the properties and reproducibility for the desired semiconductor materials and devices. The basic aspects of MOVPE include thermodynamics and kinetics both in the gas phase and on the surface, which makes it highly complex to be completely understood [1][2][3][4]. In order to develop a simple growth model for GaAs/InP MOVPE, collecting the surface reaction kinetics information will be very valuable [5,6].…”

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

“…It is a macro-scale analysis. CFD simulation was normally, successfully applied in our horizontal MOVPE reactor for GaAs/InP under the assumption of first-order reaction and only one group-III species contributing the growth [13,14]. This is because the growth rate is mostly limited by the mass transport of the group-III species.…”

Modeling analysis of the MOCVD growth of ZnO film

“…For example, the operating conditions can be set at random and the reactor geometry is easier to be modified. In recent years, there have been many studies related to horizontal and vertical MOCVD reactors and some fruitful results have been achieved [1][2][3][4][5]. Employing a two-dimensional unsteady model, the author provided a detail study on the effect of a concave and convex substrate on the flow field and the growth rate [1].…”

“…Lobanova et al [4] uniformity in vertical high-speed rotating disk reactors for III-nitride epitaxial growth. Im et al [5] analyzed the gas flow and heat transfer to obtain exact thermal boundary conditions on the reactor walls. However, few simulation results were focused on the growth of ZnO material.…”