Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate

Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy

“…However, it is difficult to predict device characteristics based on the mask pattern used in SAG. Based on the research of the kinetics in the SAG of GaAs and InP layers [2][3][4][5][6][7][8][9][10][11], we have established the precise design method of bandgap wavelength originated from the variation of thickness and composition, except at near mask edges ($10 mm) [12]. That method employed the vapor-phase diffusion model [8,13].…”

Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics

“…The temperature boundary condition of the tube walls, which is essential for precise simulation of growth rate and composition, was obtained by 3D heat-transfer simulation taking account of convection, conduction and radiation assuming only H 2 flow in gas phase [20]. The lumped reaction model (reactions 1-12) is based on the study on the gas-phase decomposition of precursors [21] and analysis of surface reaction kinetics using growth rate distributions in selective-area growth [22][23][24][25][26][27][28][29][30][31]. We considered the gas-phase decomposition of the precursors (reactions 1-4), the adsorption and the desorption of As and P species (reactions 5-8) and the surface incorporation of the gas-phase intermediates at the surface sites that are covered by either As or P (reactions 9-12).…”

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

“…Kinetic analysis using SAG is a very effective method to obtain k s l value even in mass transport limited growth regime and this may be the only method to experimentally obtain k s l value in the real MOVPE environment [7]. Our previous reports showed successful applications of this linear simulation on analysis of GaAs-MOVPE surface reaction kinetics at various temperatures [7], substrate misorientation angle [10] and group-V partial pressure [11]. However, while we examined the relation between k s l and group-III partial pressure [12], we got that k s l decreased with increasing group-III partial pressure.…”

“…Wide stripe SAG, where the SAG region is wider than 40 mm, is also a powerful tool for surface reaction kinetic analysis and finding the major reaction mechanism [7][8][9][10][11]. In the wide stripe SAG, surface migration from the mask area will only affect the range within several microns from the mask edge and this range is excluded during the analysis.…”