Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

“…One factor would be the difference in the diffusion lengths in the vapor-phase diffusion of Ga and In precursors. According to the analysis of the in-plane growth rate profile in the SAG of InN and GaN [6], the vapor-phase diffusion length is smaller than 20 mm for GaN and approximately 100 mm for InN at the growth condition of this experiment. Therefore, according to the vapor-phase diffusion, the center of the 60-mmwide stripe becomes In-rich because a Ga precursor diffusing from above the mask will be incorporated into the InGaN layer within roughly 20 mm from the mask edge, while a precursor of In can diffuse into the center of the growth area.…”

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

“…The diffusion length is close to the size of (1-101) GaN stripe; therefore, such an extreme ridge growth occurred. The different distribution in the two kinds of (1-101) facet is more stable to form than (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) facet in the case of GaN growth [14]. By increasing the growth pressure from 200 to 600 Torr, we succeeded in obtaining more uniform layers, as shown in Figs. 3(a) and 3(b).…”

“…First, we employed (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (1-101) GaN microstripes on (113) Si and (001) Si substrates as templates. The typical structures are shown in Fig.…”

“…To realize this, we need to grow microscopically uniform heterostructures on facetted microstripe structures. However, we often encounter nonuniformity in thickness and alloy composition due to the diffusion process of precursors in vapor phase and surface migration [9][10][11]. To obtain microscopically uniform heterostructures, it is crucial to understand the behavior of chemical source materials during the selective growth.…”

“…However, there have been no reports on SAG on semipolar and nonpolar faces. In this study, we investigated the effects of growth conditions during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (1-101) GaN microstripes on patterned Si substrates.…”