A Packaged 20-GHz 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink Structure

Hirachi, Yasutake; Takeuchi, Yukihiro; Igarashi, Miwa; Kosemura, K.; Yamamoto, Shinji

doi:10.1109/tmtt.1984.1132670

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1985

2003

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Cited by 13 publications

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“…Using the technique, an improvement in the RF gain of MMICs of at least 2 dB, compared to those with wraparound source ground, has been reported [1], [2].…”

Section: Introductionmentioning

confidence: 99%

A novel etching technology with reactive ion etching system for GaAs via-hole etching applications

Lin

Fang

Ting

et al. 2003

IEEE Trans. Semicond. Manufact.

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A via-hole dry etching technique has been studied with manipulating RF power and gas pressures in a reactive ion etching system. These parameters were optimized into a two-step recipe. With the recipe, a sloped and smooth profile can be obtained for monolithic microwave integrated circuits and power FET applications. With the two-step etching recipe, greater than 25:1 selectivity between GaAs/photoresist and less than 10% etching deviation were obtained. Furthermore, the slope angle from the horizontal surface is less than 80 .Index Terms-Two-step etching, via-hole etching.

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“…Using the technique, an improvement in the RF gain of MMICs of at least 2 dB, compared to those with wraparound source ground, has been reported [1], [2].…”

Section: Introductionmentioning

confidence: 99%