Reduction of common-source inductance in FET/HEMT structures utilizing wave-propagation effects

Sriram, S.; Smith, T.J.

doi:10.1109/22.826839

Cited by 3 publications

(2 citation statements)

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“…Applications of the ultra-thin wafer have now become widespread with the development of more complex miniaturized systems, which facilitate much denser threedimensional packaging [1]. Utilization of ultra-thin wafers is beneficial since it improves certain operating properties, including electronic properties [2,3], mechanical properties [4,5] and thermal properties [5]. In research conducted by Sriram and Smith [2], it was noted that these properties are significantly influenced by the thickness of the substrate.…”

Section: Introductionmentioning

confidence: 99%

“…Utilization of ultra-thin wafers is beneficial since it improves certain operating properties, including electronic properties [2,3], mechanical properties [4,5] and thermal properties [5]. In research conducted by Sriram and Smith [2], it was noted that these properties are significantly influenced by the thickness of the substrate. It is well-known that different morphologies are formed during the growth of epitaxially deposited films on a substrate, and that the transition of these morphologies is largely dependent upon the presence of elastic stress and stress-relieving misfit dislocations [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Morphological stability in epitaxially strained films on a substrate with finite thickness

Lu¹,

Su²,

Chang³

et al. 2003

J. Phys. D: Appl. Phys.

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This paper investigates the morphological stability of epitaxial films growing heteroepitaxially on ultra-thin substrates. The misfitting strain model is incorporated into the quasi-static mechanical equilibrium system. The interfacial evolution equation between the vapour and film phases is used to solve the film evolution. The perturbation method of normal modes is used to derive the analytical form of the normal-mode growth rate. Additionally, this paper investigates the dynamic behaviour of the vapour–film interface. The results of the study show that a decrease in substrate thickness tends to stabilize the system regardless of whether the stiffness ratio, ρ (i.e. the ratio of film stiffness to substrate stiffness) is less than, equal to or greater than unity. Furthermore, it is found that the effects of a finite substrate thickness on the stability behaviour of the system are quite profound, and that this is particularly true when the film thickness is close to hc with values of stiffness ratio greater than unity.

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