No abstract

No abstract

No abstract

No abstract

This paper presents a comparative performance analysis of a single-stage GaAs Low-Noise Power Amplifier (LNPA) fabricated in a 0.25 µm pHEMT process to mitigate co-site interference across multiple frequencies in the L-and S-bands. We compare five different designs from 1.2 to 3.8 GHz, each offering a minimum bandwidth of 300 MHz. Designed bandwidth is sufficient to cover several popular 5G NR FR1 channels as well as suitable for carrier aggregation in the LTE bands. An Output 1-dB compression point (OP 1dB ) of 27.5 dBm, noise figure (NF) below 1 dB and an Output 3 rd -order Intercept Point (OIP3) up to 40 dBm is achieved. Adjacent Channel Leakage Ratio (ACLR) measurements are performed at 2.5 GHz with a Peak to Average Power Ratio (PAPR) of 11.8 dB. We achieve an ACLR of -25 dBc at 25 dBm of output power for a 20 MHz, 16-QAM modulation signal, while the corresponding power added efficiency & Drain-efficiency (DE) are, on average, more than 47% & 50% respectively. An integrated Electro-Static-Discharge (ESD) limiter is also incorporated, which can tolerate up to 350 V Human Body Model (HBM) and 125 V Charged Device Model (CDM) without failure. The design occupies a footprint of only 0.325mm 2 .