A Parallel Implementation of a Two‐dimensional Hydrodynamic Model for Microwave Semiconductor Device Including Inertia Effects in Momentum Relaxation

ALSUNAIDI, MOHAMAD A.; Hammadi, S.; El-Ghazaly, S.M.

doi:10.1002/(sici)1099-1204(199703)10:2<107::aid-jnm263>3.3.co;2-6

Cited by 10 publications

(14 citation statements)

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“…As a results, the model accurately describes electron transport in short-channel devices. Full details of this model can be found in [30]. Next, the main features of the full-wave model are presented.…”

Section: Device Modelmentioning

confidence: 99%

Air-bridged gate MESFET: a new structure to reduce wave propagation effects in high-frequency transistors

Hammadi

El-Ghazaly

1999

IEEE Trans. Microwave Theory Techn.

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In conventional microwave transistors, the gain and output power are significantly reduced by gate ohmic resistance and phase cancellation. The air-bridged gate (ABG) transistors overcomes both problems by providing larger gate cross section along the propagation direction of the signal, and keeping both the input and output signals in phase along the device width. The performance of the air-bridged and conventional transistor is evaluated from both dc and radio-frequency (RF) points-of-view. A full hydrodynamic transport model, which accurately describes the electron dynamics in short channel devices, is used in the dc analysis. For RF analysis, a full-wave model, capable of capturing all important high-frequency effects, such as wave-particle interactions and traveling-wave effects, is implemented. This model is based on the coupling of the hydrodynamic transport equations with Maxwell's equations. Results related to the traveling-wave effects in conventional and ABG devices, such as phase mismatch and gain reduction at high frequencies, are illustrated. From these results, we show that the ABG metal-semiconductor fieldeffect transistor (MESFET) has superior performance at very high frequency as compared to conventional planar MESFET's.

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Section: Device Modelmentioning

confidence: 99%

Air-bridged gate MESFET: a new structure to reduce wave propagation effects in high-frequency transistors

Hammadi

El-Ghazaly

1999

IEEE Trans. Microwave Theory Techn.

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“…7 that our simulation results for a coarse grid (grid size 217 × 33) are very close to those presented in Fig. 5 in [5], where a non-uniform mesh of typical size 141 × 35 was used for a similar MESFET geometry. This may be considered as a confirmation of the results given in [5] for a relatively coars grid, but demonstrates the fact that stability of the code does not automatically imply accuracy of the results, and an investigation of the dependence of the results on the grid resolution is indispensable.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…(8) is a crude approximation which allows the calculation of the electron temperature from the total electron energy and electron drift velocity. Some authors neglect also the influence of the electron velocity on the temperature [5,6] by directly relating the electron temperature T to the average electron energy ω from stationary MC simulations. The transition from the two-gas model to the single-gas approximation has to be done carefully; therefore, we present here a short discussion of the problem which is usually not mentioned in the literature.…”

Section: Remarks On the Single Gas Approximationmentioning

confidence: 99%

“…Several different choices for r can be found in the literature, and many authors [4,5] even neglect heat conduction in their models. As a matter of fact, heat conduction does not influence the simulation results very much if r remains within a reasonable range, but Baccarani and Wordeman point out in [8] that neglecting thermal conductivity completely can lead to nonphysical results and mathematical instability.…”

Section: Remarks On the Single Gas Approximationmentioning

confidence: 99%

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Full hydrodynamic simulation of GaAs MESFETs

Aste

Vahldieck

Röhner

2004

Int J Numerical Modelling

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SUMMARYA finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical engineering tool for improved charge carrier transport simulations at high electric fields and frequencies. The discretization scheme preserves the conservation and transportive properties of the equations. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro-and optoelectronics, where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for a two-dimensional MESFET device. A comparison of the hydrodynamic model to the commonly used energy balance model is given and the accuracy of the results is discussed.

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“…An expression is needed for the thermoconductivity of the electron gas, which stems from theoretical considerations T e T n r 2 5 Several different choices for r can be found in the literature, and in many authors [7,8] even neglect heat conduction in their models.…”

Section: Average Balance Modelmentioning

confidence: 99%

Dispersion Relation for Two-Valley QuasiHydrodynamic Models in SCWs Propagation in n-GaAs Thin Films

García-Barrientos

Grimalsky

Gutierrez-D³

et al.

2006 25th International Conference on Microelectronics

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The space charge wave propagation in thin nGaAs films has been considered within a framework of different quasi-hydrodynamic balance models. A comparative study of the dependencies k( ) of a complex longitudinal wave number on frequency, which are obtained from different balance equation models are presented and discussed. It has been demonstrated that the model where the balance equations are written for different valleys directly seems to be the most correct. The balance models based on averaging over the valleys may lead to incorrect results in the case of long distances of propagation of space charge waves. When the thermal conductivity term is taken into account and the length of the system is short, the averaged balance models can get satisfactory results.

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A Parallel Implementation of a Two‐dimensional Hydrodynamic Model for Microwave Semiconductor Device Including Inertia Effects in Momentum Relaxation

Cited by 10 publications

References 0 publications

Air-bridged gate MESFET: a new structure to reduce wave propagation effects in high-frequency transistors

Air-bridged gate MESFET: a new structure to reduce wave propagation effects in high-frequency transistors

Full hydrodynamic simulation of GaAs MESFETs

Dispersion Relation for Two-Valley QuasiHydrodynamic Models in SCWs Propagation in n-GaAs Thin Films

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