A pattern matching system for linking TCAD and EDA

A fast-CAD method for evaluating through-focus interaction among features is developed based on dual layout convolution kernels derived and tested for accuracy in predicting intensity changes. The model is derived by extending the Taylor series expansion for OPD to include a quadratic term, resulting in not only the usual pattern match factor Z 3 for defocus, but also match factors for Z 0 and Z 8 . The model is tested through-focus on a logic layout and the predicted intensity change versus the actual intensity change through-focus is graphed. Results for basic case near coherent illumination show an R 2 of 0.92. Generalization to use only two patterns instead of three is shown to work well for line ends, with an R 2 of 0.96.

Section: Accuracty Of Intensity Predictionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Through-focus pattern matching applied to double patterning

Rubinstein

Neureuther

2009

“…The center of a class of hotspots can fed as a target pattern to a pattern-matching tool, which can detect similar hotspots in new layouts using fast 2D image matching [7]. This pattern-matching tool scans over the new layout and computes, for each point of interest, the distance between the local layout geometry and the representative hotspot pattern (with respect to the metrics defined above).…”

Section: Hotspot Class Representation and Pattern-matchingmentioning

confidence: 99%

Automatic hotspot classification using pattern-based clustering

Ghan

Mishra

et al. 2008

This paper proposes a new design check system that works in three steps. First, hotspots such as pinching/bridging are recognized in a product layout based on thorough process simulations. Small layout snippets centered on hotspots are clipped from the layout and similarities between these snippets are calculated by computing their overlapping areas. This is accomplished using an efficient, rectangle-based algorithm. The snippet overlapping areas can be weighted by a function derived from the optical parameters of the lithography process. Second, these hotspots are clustered using a hierarchical clustering algorithm. Finally, each cluster is analyzed in order to identify the common cause of failure for all the hotspots in that cluster, and its representative pattern is fed to a pattern-matching tool for detecting similar hotspots in new design layouts. Thus, the long list of hotspots is reduced to a small number of meaningful clusters and a library of characterized hotspot types is produced. This could lead to automated hotspot corrections that exploit the similarities of hotspots occupying the same cluster. Such an application will be the subject of a future publication.

“…In this final DDM application, locations for a MSL are extracted using a novel flow based on 2D ultra-fast, image based pattern matching software 13 . The pattern matcher can identify not only all "exact" occurrences of a given polygonal clip (provided as a bitmap image) in a full-chip layout, but also, with a decreasing "match-factor" several occurrences of "geometrically similar" shapes (fuzzy-matching Often in FAB environment, when a potential yield detractor is identified, it is necessary to validate the corresponding CDSEM measurement (and image) using other locations across the die with the same patterned shape, in order to verify systematic and/or random characteristics of the suspect yield problem.…”

Section: Pattern-matching Of Sem Images On Layoutsmentioning

confidence: 99%

Design-driven metrology: a new paradigm for DFM-enabled process characterization and control: extensibility and limitations

Capodieci

2006

After more than 2 years of development, Design-Driven Metrology (DDM) is now being introduced into production flows for semiconductor manufacturing, with initial applications targeted at 65 nm and below, but also backwardcompatible to 90 nm and above nodes. This paper presents the fundamental components of the DDM framework, and the characteristic architectural relationships among these elements. The discussion includes current status and future prospects for this new metrology paradigm, which represents the true enabler for Design For Manufacturability (DFM) flows and applications. At the core of Design-Driven Metrology lies the simple but powerful concept of utilizing physical design layouts, and more specifically (X,Y) coordinates and polygonal shapes, to automate the generation of metrology jobs. Derived from 10 year old practices of Optical Proximity Correction, the adoption of CAD tools for visualization and manipulation of design layouts, in everyday lithography work, has provided the essential infrastructure for metrology automation. The in-depth discussion of data-flow and system architecture is followed by a presentation of key DDM applications, with specific emphasis on CDSEM metrology, ranging from process development and yield optimization to circuit design. The study concludes with an analysis of the extendibility of DDM and derived flows to other metrology areas in semiconductor manufacturing.