A PCB-Embedded 1.2 kV SiC MOSFET Half-Bridge Package for a 22 kW AC–DC Converter

Knoll, Jack; Son, Gibong; DiMarino, Christina; Li, Qiang; Stahr, Hannes; Morianz, Mike

doi:10.1109/tpel.2022.3177369

Cited by 23 publications

(4 citation statements)

References 16 publications

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“…AG (AT&S)/CPES 2.2 [16] 2.3 [16] Due to the double-sided cooling arrangement, the power loop planes needs to traverse layers twice. To meet the 1.2 kV isolation requirement, a larger area will not be negatively coupled, which results in higher inductance.…”

Section: Insulation and The Electric Field Gradientmentioning

confidence: 99%

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Janabi,

Shillaber,

Ying

et al. 2024

IEEE Trans. Power Electron.

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This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC MOSFET devices. The standard cell has a stray power loop inductance of less than 1 nH and a gate loop inductance of less than 1.5 nH.The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This paper presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.

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Section: Insulation and The Electric Field Gradientmentioning

confidence: 99%

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Janabi,

Shillaber,

Ying

et al. 2024

IEEE Trans. Power Electron.

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“…Junction-and double-side cooling have been pursued for SiC devices by replacing the traditional wire bonds with interconnect methods that enable direct heat transfer from the device junction to the substrate or lead frame. Examples of such interconnect methods include soldering lead frames or substrates directly to the die topside contacts [20,76,92], soldering or sintering Cu, Mo or Cu-Mo posts or bumps between the die and the substrate [93][94][95][96], and drilling and electroplating Cu-filled vias for PCB-embedded packages [97][98][99]. As an example, the use of Cu and Mo posts in a double-side cooled configuration was utilized to achieve an overall R th,j-c of just 0.17 • C W −1 for a 10 kV, 25 A SiC MOSFET [85].…”

Section: Sic Diode and Mosfetmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

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“…It involves mounting a power semiconductor device on a substrate that has cooling channels on both sides. Doublesided cooling can help reduce the overall size and weight of the power electronics system while increasing reliability and lifespan, but it can be more complex and expensive to implement compared to other packaging options, and it requires additional design considerations [51], [52], [53], [54].…”

Section: B State Of the Art Overviewmentioning

confidence: 99%

Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations

et al. 2023

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The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers a suitable computational complexity for simulating transients in complex power converters. The objective is to define a model that enables multi-scale time simulations and facilitates rapid power converter design in system-level tools such as Simulink. Additionally, the model aims to achieve simulation accuracy comparable to device-level models for the next generation of SiC MOSFETs. The paper demonstrates the complete test bench measurement procedure for the device. This procedure is essential for experimentally extrapolating the intrinsic characteristics and developing a model-reduction approach based on electro-thermal modeling. The approach strikes a balance between computational complexity and level of detail. The proposed model has been seamlessly integrated into Simulink to simulate a 3-phase inverter for several grid cycles at the grid frequency. To evaluate the model's validity, the predicted inverter performance is compared with experimental measurements. These simulations require significantly less time compared to those based on LTspice models.INDEX TERMS Model-based design, multi-scale, simulation, power measures, power converters, silicon carbide (SiC).

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A PCB-Embedded 1.2 kV SiC MOSFET Half-Bridge Package for a 22 kW AC–DC Converter

Cited by 23 publications

References 16 publications

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations

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