A Performance Comparison of GaN FET and Silicon MOSFET

Khoshzaman, Shima; Hahn, Ingo

doi:10.1109/icit46573.2021.9453693

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) offer superior characteristics in power conversion applications, compared to silicon counterparts, thanks to the higher power density, breakdown voltage, and operating frequency with lower on-resistance and smaller size [1]- [3]. Low-power GaN transistors are also currently developed to enable integration of gate driver(s) and power switch(es) onto the same substrate.…”

Section: Introductionmentioning

confidence: 99%

High-Speed all-GaN Gate Driver with reduced power consumption

Samperi¹,

Pennisi²,

Pulvirenti³

2023

Preprint

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This paper presents a gate driver topology designed in a GaN on Si technology to be implemented on the same substrate with a 650-V, 500-mΩ power GaN switch. The driver consists of three buffer stages, three anti-cross conduction networks, two level shifters, and three bootstrap capacitors. Simulations of the proposed GaN driver are presented and a comparison with the conventional solution, assuming the same static current consumption, is provided. The proposed circuit not only solves cross-conduction problems, which are crucial for the limitation of undue dynamic power consumption, but it is also aimed at limiting static current consumption by using a bootstrap technique. Simulations show that the power GaN transistor driven by a 6-V, 2.5-MHz PWM signal with 50% duty cycle through the proposed driver, reaches a nominal switching speed as high as 50 V/ns at 27 °C, with an average current consumption of about 1 mA, over the entire range of temperature from −40 °C to 150 °C.

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Section: Introductionmentioning

confidence: 99%

High-Speed all-GaN Gate Driver with reduced power consumption

Samperi¹,

Pennisi²,

Pulvirenti³

2023

Preprint

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“…To collect this information, several authors employ simulative models based upon specification characteristics, generic transistor mechanics, as well as numerical modeling. 2 Because of their tiny size and quantum confinement properties, nanowires (NWs) are attractive components for future nanoelectronic devices. Ge is a fantastic candidate for optimum NW-based electronic components due to its small bandgap and strong carrier mobility.…”

mentioning

confidence: 99%

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Singh,

Chaudhary,

Raj

2023

ECS J. Solid State Sci. Technol.

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This paper presents the GaN GAA nanowire FET analysis with high K dielectric. The new phase in the development of power semiconductor devices has begun with the introduction of the outstanding benefits of employing wide bandgap semiconductors like gallium nitride (GaN) in the development of sophisticated devices. This work has been carried out to evaluate drain current, electric field, electric potential, and transconductance with SiO2 and HfO2 as dielectric. There are several advantages of switching from silicon-based circuits to GaN-based ones The drain current analysis shows that the device with HfO2 gate dielectric has a higher ON/OFF ratio compared to the device with SiO2 gate dielectric. The transconductance analysis also shows that the device with HfO2 gate dielectric has a higher transconductance value of approximately 9.88 S compared to the device with SiO2 gate dielectric.

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