A Perspective of Antimony Chalcogenide Photovoltaics toward Commercialization

Wang, Jun; Li, Kanghua; Tang, Jiang; Chen, Chao

doi:10.1002/solr.202300436

Cited by 12 publications

(5 citation statements)

References 95 publications

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“…Among these materials, antimony selenide (Sb 2 Se 3 ) exhibits properties that make it suitable for physical vapor deposition (PVD) techniques [5] such as a low melting point (608 • C) and a high saturated vapor pressure (22.5 Pa at 400 • C and 3.48 × 10 3 Pa at 600 • C). Moreover, Sb 2 Se 3 is classified as a non-toxic material in practical terms [6], with an optimal optical bandgap of around 1.2 eV and a high absorption coefficient greater than 10 5 cm −1 , which makes it potentially a strong candidate to replace critical absorber layers in photodetectors [7] and in solar cells.…”

Section: Introductionmentioning

confidence: 99%

Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques

Jakomin,

Rampino,

Spaggiari

et al. 2024

Solar

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In recent years, research attention has increasingly focused on thin-film photovoltaics utilizing Sb2Se3 as an ideal absorber layer. This compound is favored due to its abundance, non-toxic nature, long-term stability, and the potential to employ various cost-effective and scalable vapor deposition (PVD) routes. On the other hand, improving passivation, surface treatment and p-type carrier concentration is essential for developing high-performance and commercially viable Sb2Se3 solar cells. In this study, Cu-doped Sb2Se3 solar devices were fabricated using two distinct PVD techniques, pulsed electron deposition (PED) and radio frequency magnetron sputtering (RFMS). Furthermore, 5%Cu:Sb2Se3 films grown via PED exhibited high open-circuit voltages (VOC) of around 400 mV but very low short-circuit current densities (JSC). Conversely, RFMS-grown Sb2Se3 films resulted in low VOC values of around 300 mV and higher JSC. To enhance the photocurrent, we employed strategies involving a thin NaF layer to introduce controlled local doping at the back interface and a bilayer p-doped region grown sequentially using PED and RFMS. The optimized Sb2Se3 bilayer solar cell achieved a maximum efficiency of 5.25%.

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Section: Introductionmentioning

confidence: 99%

Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques

Jakomin,

Rampino,

Spaggiari

et al. 2024

Solar

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“…[1] In recent times, there has been active research on various photovoltaic (PV) materials underway that can transform laboratory-scale device technology (<1 cm 2 area) to larger-area modules exceeding 25 cm 2 with the purpose of commercialization. [2,3] Making large-area solar cells or modules provides a higher surface area that facilitates enhanced photon absorption. [4] It subsequently enhances electricity generation and power output, lowering manufacturing costs.…”

Section: Introductionmentioning

confidence: 99%

Machine Learning Aided Optimization of P1 Laser Scribing Process on Indium Tin Oxide Substrates

Karade,

Kim,

Jeong

et al. 2024

Advanced Intelligent Systems

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Present study employes a picosecond laser (532 nm) for selective P1 laser scribing on the indium tin oxide (ITO) layer and subsequent fine‐tuning of P1 scribing conditions with machine learning (ML) techniques. Initially, the scribing is performed by varying different laser parameters and further evaluate them via an optical microscope and two probe resistivity measurements. The corresponding scribing width and sheet resistance data are used as input databases for ML analysis. The classification and regression tree (CART)‐based ML analysis revealed that median pulse energy <5.7 μJ insufficient to separate the adjacent scribing regions. While pulse energy >5.7 μJ, APL > 35%, LSO > 46%, and processing speed ≥1250 mm s−1 gives ≥16 μm of scribing width. Further, the decision tree (DT) analysis showed that pulse energy of ≥8.1 μJ, and LSO ≥ 37% are required for electrically isolated lines. The feature importance score suggests that laser fluence and pulse energy determined the scribing width, whereas electrical isolation strongly depends on LSO and processing speed. Finally, the ML achieved conditions experimentally validated and reassessed via scanning electron microscope, and atomic force microscopy aligns well with optical microscope measurements.

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“…To date, various reviews have covered different critical aspects of Sb 2 X 3 PV, with particular emphasis on presenting either a generic overview (of anisotropy, crystal-structure, band-structure, photophysical properties, deposition techniques, and recent advances), 18,20–26 doping, 27 device and interfacial engineering, 19,28,29 or commercialization prospects, 30 while the defect engineering aspect has largely remained unexplored. Recently, Wijesinghe et al 31 published a review emphasizing defect engineering in Sb 2 Se 3 solar cells.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

Barthwal,

Singh,

Chauhan

et al. 2023

Mater. Adv.

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A Perspective of Antimony Chalcogenide Photovoltaics toward Commercialization

Cited by 12 publications

References 95 publications

Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques

Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques

Machine Learning Aided Optimization of P1 Laser Scribing Process on Indium Tin Oxide Substrates

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

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