A Photoelectron Spectroscopy Study of  CF 4 /  H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Thomas, J. H.; Hammer, L. H.

doi:10.1149/1.2097127

Cited by 41 publications

(23 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…16͒ to 530.7 eV, attributable to Ta oxide formation. 17 The experimental C(1s) spectrum of the clean Si-O-C ͓Fig. 1͑c͒, bottom͔ is well fit with a full width at half maximum ͑FWHM͒ of 2.2 eV at binding energies of 283.3 eV and 284.7 eV, consistent with SiuC 15 and CuC 12 bonding environments, respectively.…”

Section: Ta Deposition Using a Low Deposition Rate (è1 å Min à1 )mentioning

confidence: 66%

Ta metallization of Si–O–C substrate and Cu metallization of Ta/Si–O–C multilayer

Tong

Martini

Magtoto

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Interfacial reactions of Ta with a Si–O–C low-dielectric constant (low-k) material and Cu/Ta/Si–O–C multilayers are investigated using x-ray photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (TEM). Data indicate that Ta deposition on the low-k substrate results in the initial formation of Ta oxide and TaC. Subsequent deposition of Ta eventually results in the formation of a metallic Ta overlayer at 300 K. The thickness of the initial Ta oxide/TaC-containing layer varies with the Ta deposition rate. At a deposition rate of ∼1 Å min−1, no metallic Ta is observed, even after 32 min sputter deposition time. In contrast, a film of roughly the same thickness, obtained after 15 s deposition at a rate of ∼2 Å s−1, is predominantly metallic Ta. Sputter deposition rates, derived from XPS data, are in agreement with film thicknesses derived from cross-sectional TEM data. Heating of Ta/low-k films in UHV results in no significant changes (as detected by XPS) up to 800 K. Cu deposited by sputter deposition onto a low-k surface covered with metallic Ta exhibits conformal growth, whereas 3d islanding is observed on a surface where TaC and Ta oxide are present. Cu diffusion into the bulk substrate is not observed at temperatures below 800 K in UHV.

show abstract

Section: Ta Deposition Using a Low Deposition Rate (è1 å Min à1 )mentioning

confidence: 66%

Ta metallization of Si–O–C substrate and Cu metallization of Ta/Si–O–C multilayer

Tong

Martini

Magtoto

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…The binding energy in TaO x is 0.8 eV higher than that in Ta 2 O 5 , implying that more electronegative species are involved in the bonds. 31 This species was possibly a negatively charged Ta vacancy or oxygen ion. Figures 6(b) and 6(c) depict the deconvoluted XPS peaks from the Ta20 and Ta22 samples, respectively.…”

Section: Resultsmentioning

confidence: 99%

Influence of Ta content on the physical properties of SrBi₂Ta₂O₉ ferroelectric thin films

Hsu

Leu

Chien³

et al. 2006

J. Mater. Res.

View full text Add to dashboard Cite

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2E c ∼ 87 kV/cm) and a high remanent polarization (2P r ∼ 15 C/cm 2 ). The value of 2P r decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

show abstract

“…6͑a͒, the binding energy of Si for f N ϭ0% is 99.3 eV, indicating Si bonding with Ta. 17 For f N ϭ15%, the Si 2p peak at 101.8 eV indicates Si-N bond formation. 18 It shows a significant increase of Si-N bonding with increasing f N .…”

Section: Resultsmentioning

confidence: 99%

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Suh

Heuss

Misra

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Reactively sputtered TaSixNy films have been investigated as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. The as-deposited TaSixNy films were amorphous over a wide range of compositions. After annealing at 1000 °C, Ta30Si33N37 film became crystalline, however Ta26Si28N52 film remained amorphous. The x-ray photoelectron spectroscopy shows a significant increase of Si–N bonding in the TaSixNy films with increasing N content. The presence of Si–N bonds is attributed to cause the amorphous nature of the high N containing TaSixNy films. The work functions of TaSixNy films were extracted by capacitance–voltage analysis. The work function values for TaSixNy films with varying N contents range from 4.26 to 4.35 eV after forming gas annealing at 400 °C for 30 min, suggesting that TaSixNy films have work functions appropriate for n-type metal-oxide-semiconductor devices. However, it was observed, after 1000 °C anneals, that the work function of TaSixNy films increased to ∼4.8 eV. We believe that the mechanism that causes the work function to increase is the formation of a Ta-disilicide layer at the interface of the electrode and the dielectric. Current–voltage characteristics of the TaSixNy gates showed lower gate leakage compared to the TaSix gates, due to the retarding formation of an interface layer in the TaSixNy/SiO2/p-Si structures.

show abstract

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Cited by 41 publications

References 14 publications

Ta metallization of Si–O–C substrate and Cu metallization of Ta/Si–O–C multilayer

Ta metallization of Si–O–C substrate and Cu metallization of Ta/Si–O–C multilayer

Influence of Ta content on the physical properties of SrBi₂Ta₂O₉ ferroelectric thin films

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Contact Info

Product

Resources

About

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Cited by 41 publications

References 14 publications

Ta metallization of Si–O–C substrate and Cu metallization of Ta/Si–O–C multilayer

Ta metallization of Si–O–C substrate and Cu metallization of Ta/Si–O–C multilayer

Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Contact Info

Product

Resources

About

Influence of Ta content on the physical properties of SrBi₂Ta₂O₉ ferroelectric thin films