A Physical Model of High Temperature 4H-SiC MOSFETs

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

“…Similarly to most semiconductor materials, the bandgap energy decreases as temperature increases, whilst the intrinsic concentration increases with temperature [30]. The mobility in SiC devices has a more complex dependency on temperature depending on doping levels and density of traps at the gate oxide/SiC interface resulting in bulk mobility to decrease but channel mobility to potentially increase with temperature [31]- [32]. Temperature effects on these parameters can be summarised by the empirical relations:…”

A Physics-Based Compact Model of SiC Power MOSFETs

“…These traps degrade the device performance by reducing the electron density and electron mobility in the transistor channel [17]. Since the trap densities and their occupation with electrons are very temperature dependent they have also a significant influence on the temperature characteristic of the SiC MOSFET.…”

“…The dimensions and doping concentrations have been chosen in such a way that the characteristics of a 1.2 kV SiC MOSFET, manufactured by Cree Inc. (CMF2010D [28]), could be reproduced. The density of interface traps at the semiconductor-oxide boundary has been selected according to the analysis presented in the paper [17] and to adjust the IDS(VGS)-curve to the experimental result. The influence of the interface traps on the electron charge in the transistor channel can be seen in Fig.…”

Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs

“…Moreover, various physic-based compact models have been proposed, some including crucial electro-thermal effects (e.g. [8]- [9]). …”