A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD

Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics

“…It should also be scalable, that is, provide an acceptable level of leakage and acceptable levels of electron and hole mobility at a reduced thickness. High-k dielectric materials satisfying these conditions may be advantageously employed for high performance semiconductor devices 13 . Different materials similarly have different abilities to hold charge.…”

Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

“…The function can be calculated by integrating the inversion charge along the channel [6] or by comparing (1) with the drain current expression given in [3]. The following equation is obtained if we follow the latter method: (2) where is the front gate-source voltage, is the threshold voltage (calculated as reported in [3]), and the front and back oxide capacitance, the depletion capacitance, the silicon film thickness, the charge coupling parameter between 0741-3106/00$10.00 © 2000 IEEE the front and back gates (it depends on the operating region of the back surface [8]) and (3) is a parameter to account for the drain-induced conductivity enhancement (DICE) [3]. This effect does not allow us to use the gradual channel approximation due to the important influence of the drain potential on the current, therefore a two-dimensional (2-D) potential and charge description of the device is necessary and is accomplished using this model.…”

Strained-si devices and circuits for low-power applications

“…For bulk-SS device, the DIBL could be expressed as (8) where t d is the depletion width described in (6) and L eff is the effective channel length. From (8), DIBL could be different between Si and SS devices.…”

“…The DIBL model is derived by solving the two-dimensional Laplace's equation with Gauss's law and physical approximations [8]. For bulk-SS device, the DIBL could be expressed as (8) where t d is the depletion width described in (6) and L eff is the effective channel length.…”