A physically based base pushout model for submicrometer BJTs in the presence of velocity overshoot

Fuse, T.; Namasaki, T.; Matsuzawa, K.; Watanabe, Shigeru

doi:10.1109/16.121699

Cited by 16 publications

(2 citation statements)

References 18 publications

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“…el. [1] developed a base pushout model for BJT in the presence of velocity overshoot where they showed that base pushout occurs when the collector current is increased beyond a critical value. Later J.J.Liou and C.S.…”

Section: Introductionmentioning

confidence: 99%

Analytical modelling of base transit time considering recombination in the non-uniformly doped base under base pushout condition

Ferdaus

Saha

Yeazul

et al. 2011

TENCON 2011 - 2011 IEEE Region 10 Conference

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The main objective of this paper is to show that recombination in the base needs to be taken into account in determining base transit time under base pushout condition. In previous analytical works for this transit time with base pushout, recombination in the base was neglected, since inclusion of this mechanism leads to an analytically intractable governing differential equation. In this work, the intractability problem is resolved by applying the concept of perturbation theory and by using an elegant exponential approximation technique. The developed model considers both SRH and Auger recombination with doping dependent lifetime and also, considered the energybandgap-narrowing effects as well as doping and field dependent mobility due to heavy doping. The model shows that recombination has significant effects on the base transit time of a heavily doped base under base pushout condition.978-1-4577-0255-6/11/$26.00

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Section: Introductionmentioning

confidence: 99%

Analytical modelling of base transit time considering recombination in the non-uniformly doped base under base pushout condition

Ferdaus

Saha

Yeazul

et al. 2011

TENCON 2011 - 2011 IEEE Region 10 Conference

View full text Add to dashboard Cite

show abstract

“…The accurate determination of the base resistance is essential for BJT design and modeling. It is known that the base resistance decreases as the operating current increases due to base conductivity modulation, base push-out in high-level injection, and current crowding effects [6]- [8]. The crowding is the tendency for current to flow at the edge of the intrinsic base region at high-level current injection due to a voltage drop along the base current path in the intrinsic base region.…”

mentioning

confidence: 99%

Three-dimensional base distributed effects of long stripe BJT's: base resistance at DC

Chuang

Law

1998

IEEE Trans. Electron Devices

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Abstract-An analytical model describing the dc voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe BJT's with double polysilicon technology is presented. It is shown that the bias dependent debiasing effect in the base polysilicon contacts causes an unequal division of base current between two base polysilicon contacts and results in a redistribution of base current in the base regions at different levels of current injection. The base resistance is also modulated by this current re-distribution effect at different biases. The change of base resistance with bias is calculated and the results show the importance of the distributed effects in the base polysilicon region in determining the base resistance.

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Digital Design

Raje¹

1993

BiCMOS Technology and Applications

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A physically based base pushout model for submicrometer BJTs in the presence of velocity overshoot

Cited by 16 publications

References 18 publications

Analytical modelling of base transit time considering recombination in the non-uniformly doped base under base pushout condition

Analytical modelling of base transit time considering recombination in the non-uniformly doped base under base pushout condition

Three-dimensional base distributed effects of long stripe BJT's: base resistance at DC

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