A physically-based semi-empirical effective mobility model for MOSFET compact I–V modeling

Unification of MOS compact models with the unified regional modeling approach

“…This model is still used in the charge model, whose parameters can be extracted from a given technology of V t vs. L g data, and is the key to physical geometry scaling without too many empirical fittings. He also developed the mobility model [15], the gate-bias-dependent series resistance model [16], and the velocity-overshoot model [17] based on the energybalance formalism for the electron-temperature gradient, which have been adapted to the current Xsim model. The idea of the one-iteration parameter extraction [14,18] has also been a unique feature of the core model.…”

“…The key to linking the two sets of equations is the "fulldepletion" condition: where X o (V g ) is the ZF location (or depletion width) under V g due to one gate alone, given by (15), which scales over the entire doping range from high N A to zero, modeled by (13). When the sum of the two "depletion width" is smaller than the body thickness, the two gates are "decoupled" and the device has a neutral body where φ o = V r , such as PD-SOI or two bulk-MOS in parallel.…”

Extraction of series resistance using physical mobility and current models for MOSFETs

“…The known formula E eff / V G + V T [9] is not accurate because it is based on too strong assumptions. Instead, using Eqs.…”

Source–Drain Symmetry in Unified Regional MOSFET Model

“…Main sources of model asymmetry arise from the effective mobility expression, which includes transverse-and lateral-field dependencies, as well as the effective transverse field modeling. The transverse field-dependent mobility is usually modeled by [11], [13] (4) with , , and being due to Coulombic, phonon, and surface roughness scatterings, respectively, and , , and are fitting parameters [13]. The effective transverse field is related to the inversion and bulk charges as [7] , where for electrons.…”