A physics-aware methodology for equivalent circuit model extraction of TSV-inductors

Chen, Baixin; Zhuo, Cheng; Shi, Yiyu

doi:10.1016/j.vlsi.2018.07.002

Cited by 3 publications

(2 citation statements)

References 33 publications

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“…In physics-based LEEC models, all elements have definite physical meanings, although some assumptions are made to simplify the model. These models are more compatible with physical phenomena and theoretical analysis compared to some complex circuit models extracted using numerical fitting methods, such as the method from [ 24 ].…”

Section: Construction Of the Lumped-element Equivalent Circuit Modmentioning

confidence: 99%

“…Based on this model, they extracted parameters using the electronic design automation software package, Agilent Advanced Design System (ADS), but large discrepancies between the test-based and model-based inductance results were recorded about the self-resonant frequency. Chen et al reported a physics-aware methodology to extract the equivalent circuit model for through-silicon vias (TSV)-inductors [ 24 ]. A comprehensive design methodology was proposed involving the initial establishment of a template model.…”

Section: Introductionmentioning

confidence: 99%

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Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

Sun

et al. 2020

Micromachines

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Integrated 2D spiral inductors possess low inductance per unit area, which limits their application range. However, the state of investigation into the lumped-element parameter extraction method for integrated 3D in-chip multi-turn solenoid inductors, which possess higher inductance per unit area, is inadequate. This type of inductor can thus not be incorporated into fast computer-aided design (CAD)-assisted circuit design. In this study, we propose a broadband two-port physics-based equivalent circuit model for 3D microelectromechanical system (MEMS) in-chip solenoid inductors that are embedded in silicon substrates. The circuit model was composed of lumped elements with specific physical meanings and incorporated complicated parasitics resulting from eddy currents, skin effects, and proximity effects. Based on this model, we presented a lumped-element parameter extraction method using the electronic design automation software package, Agilent Advanced Design System (ADS). This method proved to be consistent with the results of two-port testing at low to self-resonant frequencies and could thus be used in CAD-assisted circuit design. The lumped element value variations were analyzed based on the physical meaning of the elements with respect to variations in structures and the substrate resistivity of inductors. This provided a novel perspective in terms of the design of integrated in-chip solenoid inductors.

show abstract

Section: Construction Of the Lumped-element Equivalent Circuit Modmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

Sun

et al. 2020

Micromachines

View full text Add to dashboard Cite

show abstract

A two-step optimization strategy for the inductance control of TSV-based 3-D inductor based on the SAE model

Wang,

Yang,

Chen

et al. 2024

Struct Multidisc Optim

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Behavioral Model of Inductors via Physics-Informed Circuit Synthesis and Modified Vector Fitting

Wan,

Negri,

Spadacini

et al. 2024

2024 International Symposium on Electromagnetic Compatibility – EMC Europe

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A physics-aware methodology for equivalent circuit model extraction of TSV-inductors

Cited by 3 publications

References 33 publications

Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit Model

A two-step optimization strategy for the inductance control of TSV-based 3-D inductor based on the SAE model

Behavioral Model of Inductors via Physics-Informed Circuit Synthesis and Modified Vector Fitting

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