A platform for making and transferring oxide films

Tsukazaki, Atsushi

doi:10.1038/d41586-020-00206-1

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…A universal method for the generation of free-standing single-crystalline thin films of complex oxide materials is based on the separation of membrane and substrate by a few layers of graphene [18] (Figure 6a). The potential fields of the substrate atoms transmit crystal structure information through the graphene layer, thus serving as a growth guide for the growing thin film, which can subsequently be easily detached and transferred to any other material due to the weak van der Waals bonding forces between graphene and substrate.…”

Section: Transfermentioning

confidence: 99%

“…Crystalline thin-films of complex oxide materials possess a wide range of fascinating physical, electronic, chemical and optical 2D correlated properties which can be tuned due to their stoichiometry-or composition-dependency and deviate entirely from the behaviour of the bulk solid due to the reduction of dimensions and symmetry [1][2][3]. They include phase transitions and nanoscale elasticity [4], unconventional high-temperature superconductivity [5][6][7][8][9][10][11], colossal magnetoresistance [12,13], Mott metal-insulator transitions [14,15], multiferroicity [16][17][18] and other exotic magnetic properties [19] as well as strong light interaction [20] and distinctive electronic properties as a result of strong electron-electron correlations [21]. For example, as the layer thickness is reduced approaching the monolayer limit, the band structure and the mechanical properties such as flexibility and strength of the material change.…”

Section: Introductionmentioning

confidence: 99%

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Oxidic 2D Materials

Dubnack

Müller

2021

Materials

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The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.

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Section: Transfermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Oxidic 2D Materials

Dubnack

Müller

2021

Materials

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Next generation ferroelectric materials for semiconductor process integration and their applications

Mikolajick

Slesazeck

Mulaosmanovic

et al. 2021

Journal of Applied Physics

269

166

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Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

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Ferroelectric Devices for Content-Addressable Memory

et al. 2022

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In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address. The issues of constructing binary and ternary content-addressable memory (CAM and TCAM) based on ferroelectric devices are considered. A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors.

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A platform for making and transferring oxide films

Cited by 3 publications

References 11 publications

Oxidic 2D Materials

Oxidic 2D Materials

Next generation ferroelectric materials for semiconductor process integration and their applications

Ferroelectric Devices for Content-Addressable Memory

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