1986
DOI: 10.1109/jlt.1986.1074663
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A polarization-independent 1 × 16 guided-wave optical switch integrated on lithium niobate

Abstract: We report the fabrication and testing of several models of a complex integrated Ti: LiNb03 switch array, a one-input-to-sixteenoutput switch that is polarization independent for use with standard single-mode fibers. The switch array has 15 directional couplers arranged in a binary tree with four ranks. The device is fitted with connectorized single-mode fiber pigtails and housed in a package that permits convenient transport and use. The best measured losses (fiberwaveguide-fiber) are 3.0 dB for the TE polariz… Show more

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Cited by 41 publications
(3 citation statements)
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“…Since the first demonstration of Ti indiffused waveguides in LiNbOg (Schmidt & Kaminow 1977) the fabrication process has been developed, the material improved and tools for modelling the device fabrication developed (Thylen et al 1983). The relatively simple fabrication of devices of lower insertion loss and drive voltage than is the case for semiconductors has made LiNbOg-devices prevalent and led to the fabrication of increasingly complex structures, which today cover an impressive functional spectrum of which a nonexhaustive listing follows: high-speed modulators and switches (Alferness et al 1984;Becker 1984;Thylen et al 1984); polarization converters (Alferness & Buhl 1981;Hedrich et al 1986); frequency shifters (Wong et al 1984;Kingston et al 1982;; switch matrices (Granestrand et al 1986;Neyer et al 1986;Bogert 1987); integrated high-speed devices Lagerstrom et al 1987); time multiplexers and demultiplexers (Sawano et al 1987); wavelength filters (Alferness & Schmidt 1978); polarization-independent devices (Alferness 1979;McCaughan 1984;Watson et al 1986). Some of these devices are highlighted below.…”
Section: Device Typesmentioning
confidence: 99%
“…Since the first demonstration of Ti indiffused waveguides in LiNbOg (Schmidt & Kaminow 1977) the fabrication process has been developed, the material improved and tools for modelling the device fabrication developed (Thylen et al 1983). The relatively simple fabrication of devices of lower insertion loss and drive voltage than is the case for semiconductors has made LiNbOg-devices prevalent and led to the fabrication of increasingly complex structures, which today cover an impressive functional spectrum of which a nonexhaustive listing follows: high-speed modulators and switches (Alferness et al 1984;Becker 1984;Thylen et al 1984); polarization converters (Alferness & Buhl 1981;Hedrich et al 1986); frequency shifters (Wong et al 1984;Kingston et al 1982;; switch matrices (Granestrand et al 1986;Neyer et al 1986;Bogert 1987); integrated high-speed devices Lagerstrom et al 1987); time multiplexers and demultiplexers (Sawano et al 1987); wavelength filters (Alferness & Schmidt 1978); polarization-independent devices (Alferness 1979;McCaughan 1984;Watson et al 1986). Some of these devices are highlighted below.…”
Section: Device Typesmentioning
confidence: 99%
“…Various types of optical switches have been studied [2,3,4,5,6]. However, there have been difficulties in making compact optical switches, since available refractive index changes of materials for optical switching is typically limited to be below 1%.…”
Section: Introductionmentioning
confidence: 99%
“…In such networks, the frame gaps for optical packets is of the order of nanoseconds [1]. Various approaches have already been proposed to meet the demand for fast switches, including a semiconductor TIR switch [1], PLZT-based switches [2,3], a SiGe/Si MMI switch [4], and lithium niobate (LN) directional-couplerbased switches [5][6][7][8]. Of these, LN-based switches appear to be the most attractive, because they are capable of high switching speeds with low loss characteristics.…”
Section: Introductionmentioning
confidence: 99%