A Poly-Si Gate Carbon Nanotube Field Effect Transistor for High Frequency Applications

Abstract

We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3µm and achieves a unity gain frequency f T of 2.5GHz and a maximum oscillation frequency f max of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.Index Terms -nanotechnology, carbon nanotube, field effect transistor, poly-silicon.

Applications of Graphene at Microwave Frequencies

“…Within the past years, graphene FET (GFET) transistors have been successfully fabricated [31][32][33][34]. In terms of operating speed, the results are impressive.…”

Carbon Nanotube Field Effect Transistors for High Speed Electronics

“…The extraordinary electronic properties of carbon nanotubes make them leading candidates for a future generation of RF defense electronics [1]. Carbon nanotube field effect transistors (CNT FETs) are being developed as potential replacements for silicon and III-V semiconductor devices for both analog and digital circuitry [2][3][4][5][6][7], because they simultaneously offer high speed, high linearity, low power, and low noise. Carbon nanotube FETs are projected to have (1) a cut-off frequency of over 1 THz due to their small parasitic capacitance and high carrier mobility; (2) 1000X lower dissipated power than current GaAs devices without sacrificing linearity, and (3) intrinsically low shot noise and high linearity originating from the one-dimensional conduction channel realizable with carbon nanotubes [8][9][10][11].…”