A polysilicon source and drain MOS transistor (PSD MOST)

Abstract

An MOS transistor is described in which the source and drain areas are obtained by diffusion from doped polycrystalline silicon. Polysilicon tracks form the interconnect with the diffusion areas without the need for contact windows. As a result trarnsistor and junction sizes are reduced by a factor 2 or 3 over a normal structure. Polycrystalline silicon tracks in this