A Portable 2-Transistor Picowatt Temperature-Compensated Voltage Reference Operating at 0.5 V

Seok, Mingoo; Kim, Gyouho; Blaauw, David; Sylvester, Dennis

doi:10.1109/jssc.2012.2206683

Cited by 359 publications

(230 citation statements)

References 27 publications

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“…There are several resistorless bias reference circuits that take advantage of the availability of different V tnmos or V tpmos devices, i.e., high and low threshold devices [23,24]. The aforementioned techniques require an ASIC and availability of different threshold devices in the process.…”

Section: Fg-based Voltage Reference Without Resistorsmentioning

confidence: 99%

Models and Techniques for Temperature Robust Systems on a Reconfigurable Platform

Shah

Töreyin

Hasler

et al. 2017

JLPEA

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This paper investigates the variability of various circuits and systems over temperature and presents several methods to improve their performance over temperature. The work demonstrates use of large scale reconfigurable System-On-Chip (SOC) for reducing the variability of circuits and systems compiled on a Floating Gate (FG) based Field Programmable Analog Array (FPAA). Temperature dependencies of circuits are modeled using an open-source simulator built in the Scilab/XCOS environment and the results are compared with measurement data obtained from the FPAA. This comparison gives further insight into the temperature dependence of various circuits and signal processing systems and allows us to compensate as well as predict their behavior. Also, the work presents several different current and voltage references that could help in reducing the variability caused due to changes in temperature. These references are standard blocks in the Scilab/Xcos environment that could be easily compiled on the FPAA. An FG based current reference is then used for biasing a 12 × 1 Vector Matrix Multiplication (VMM) circuit and a second order G m − C bandpass filter to demonstrate the compilation and usage of these voltage/current reference in a reconfigurable fabric. The large scale FG FPAA presented here is fabricated in a 350 nm CMOS process.Keywords: circuits and system; temperature dependence; reference generator; FPAA Analog Processing and Temperature DependenceThe number of systems combining elements from within and among the emerging technologies of sensors, communications, and robotics grows every day. The computational abilities of these systems affect the overall system performance through various aspects (e.g., functionality, battery-life, foot-print, etc.). Traditionally most computational tasks have been performed in the digital domain, which can achieve high resolution computation at the cost of high power consumption [1]. For systems with a limited power budget, however, low-power, real-time computation techniques have been sought after. Accordingly, analog-signal-processing has been used extensively as an energy-efficient alternative to digital options [2][3][4].Recent mixed-mode large-scale Field-Programmable Analog Array (FPAA) enables advanced functionality for a wide spectrum of sensor applications [5]. These FPAAs combine the energy-efficiency, reconfigurability, and programmability of floating-gate-based analog signal processing with the precision and compatibility of digital, thereby a variety of analog circuitry implemented on FPAAs serve as building blocks of more complex signal processing functions [5].Many of the systems that can benefit from the computational power of an FPAA need to operate over a range of environments and temperatures. For instance, modern ubiquitous medical health assessment systems use physiologic signals collected from ambulatory subjects during daily outdoor

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Section: Fg-based Voltage Reference Without Resistorsmentioning

confidence: 99%

Models and Techniques for Temperature Robust Systems on a Reconfigurable Platform

Shah

Töreyin

Hasler

et al. 2017

JLPEA

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“…Comparing with [5], a lower supply voltage can be achieved by using less stacked-cascade connection. Because no special device is required, the proposed voltage reference has wider application than the circuits proposed in [1,4].…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Voltage references with nanowatts power consumption are proposed [1,2,3,5]. Moreover, the topology proposed in [4] can be achieved in the picowatt level, while some of them [1,4] inevitably have used special devices (e. g. thick gate oxides MOSFET with higher threshold), which is not compatible with the standard CMOS process. And the architecture proposed in [3] for bio-implants can only operate in a small range of temperature.…”

Section: Introductionmentioning

confidence: 99%

A low power CMOS voltage reference based on body effect

Zeng

Luo

Zhang

et al. 2013

IEICE Electron. Express

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A voltage reference of low supply voltage and low power consumption has been proposed and simulated using 0.18 m process in this paper. Utilizing the body effect, temperature compensation is achieved without using any other special devices such as thick gate oxides MOSFETs with higher threshold. The simulation results show that the line sensitive is 0.73 ppm/V in a supply voltage range of 0.6 V to 2 V and the temperature coefficient is typically 23.7 ppm/℃ in a temperature range of À20℃ to 80℃ with the power consumption of 30.5 nW at room temperature. The power supply rejection ratio is À40 dB at 10 Hz and À32 dB at 100 Hz, respectively.

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“…Recently, several solutions employ two devices with different V th values to achieve a low output [12][13][14]. Because the bandgap reference source is used in [12], the output voltage is larger than the threshold voltage, and the power dissipation is still high because resistors are used.…”

Section: Introductionmentioning

confidence: 99%

“…Because the bandgap reference source is used in [12], the output voltage is larger than the threshold voltage, and the power dissipation is still high because resistors are used. In [13,14], ultra-low-power dissipation can be achieved. However, these designs require a process with multiple-V th values.…”

Section: Introductionmentioning

confidence: 99%

A Nano-power Switched-capacitor Voltage Reference Using MOS Body Effect for Applications in Subthreshold LSI

Zhang¹,

Huang²,

Zhang³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in 0.18 µm standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is 17.6 ppm/ o C, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 90 nA at room temperature. The area occupation is approximately 0.03 mm 2 .

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A Portable 2-Transistor Picowatt Temperature-Compensated Voltage Reference Operating at 0.5 V

Cited by 359 publications

References 27 publications

Models and Techniques for Temperature Robust Systems on a Reconfigurable Platform

Models and Techniques for Temperature Robust Systems on a Reconfigurable Platform

A low power CMOS voltage reference based on body effect

A Nano-power Switched-capacitor Voltage Reference Using MOS Body Effect for Applications in Subthreshold LSI

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