A predicted non-layered phase of In2Se3 by first principles

Lv, Shaomin; Yin, Geng-Xin; Cui, Hong‐Ling; Wang, Haiyan

doi:10.1016/j.ssc.2020.114159

Cited by 5 publications

(2 citation statements)

References 43 publications

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“…We further calculate the hopping rate of vacancy upon the electric field by varying the temperature, as shown in Figure f. The hopping rate can be expressed as equation R j = ν 0 exp(− G b / K B T ), in which R j , ν 0 , G b , K B , and T are hopping rate, Debye frequency (172.6 K), calculated diffusion barrier, Boltzmann constant, and temperature, respectively. One can see that temperature greatly affects the hopping rate.…”

Section: Resultsmentioning

confidence: 99%

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Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Hao

Niu

Han

et al. 2023

ACS Appl. Nano Mater.

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Combining the intrinsic superiorities of two-dimensional materials and the emerging demand for neuromorphic computing, two-dimensional memristors have achieved huge advances in materials exploration and synaptic functionality emulation. However, their neuromorphic applications are still in the early stage since digital memristive behaviors for most of them are inconsistent with gradual biological synaptic plasticity. Here, we developed a simple approach to realize analog and thermal tunable memristive behaviors by introducing sulfur vacancies in CVD-grown In 2 Se 3 nanoflakes through secondary sulfurization treatment. The density functional theory and ab initio molecular dynamics simulations confirm that sulfurized and defective In 2 Se 3 can remain thermal stability at elevated temperatures up to 550 K. Therefore, we systematically investigated the temperature-dependent analog and tunable memristive behaviors and realized linear weight update with ultrawide dynamic range in sulfurized In 2 Se 3 at high temperatures. The developed memristive device successfully emulates bio-realistic synaptic functionalities including transformation from short-to long-term plasticity, paired-pulse facilitation, posttetanic potentiation, spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and spike-time-dependent plasticity effects. It is unveiled that the formation energy of sulfur vacancy is greatly smaller than that of selenium, while their roughly same migration barriers can be modulated by electric field and temperature. Therefore, we put forward that the applied electric field can mediate vacancy migration in the sulfurized In 2 Se 3 to gradually regulate the conductance, thereby realizing the emulation of synaptic plasticity. This work provides a promising approach to designing bio-plausible memristive devices for robust neuromorphic applications at high temperatures.

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Section: Resultsmentioning

confidence: 99%

“…and T are hopping rate, Debye frequency (172.6 K), 49 calculated diffusion barrier, Boltzmann constant, and temperature, respectively. One can see that temperature greatly affects the hopping rate.…”

Section: Resultsmentioning

confidence: 99%

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Hao

Niu

Han

et al. 2023

ACS Appl. Nano Mater.

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Thermally Deposited Pt/InSe/Nb₂O₅/Ag Stacked Layers Designed as Negative Capacitance Sources and Antennas for 5 G/6 G Networks

Alharbi,

Qasrawi,

Algarni

2024

Physica Status Solidi (a)

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Herein, Pt/InSe/Nb2O5/Ag (ISNO) stacked layers are designed as multichannel 5 G/6 G network antennas and negative capacitance (NC) sources. The devices are fabricated using thermal deposition technique to coat Pt/InSe thin films with transparent Nb2O5 dielectric windows. While Pt thin films induce the crystallinity of InSe, the Nb2O5 layer remains amorphous. The impedance spectroscopy studies show that the Pt/InSe/Ag (IS) and (ISNO) antenna channels exhibit resonance–antiresonance peaks at driving frequencies of ≈0.4 and ≈1.1 GHz, respectively. Both the IS and ISNO antenna channels exhibit the NC effect in a wide range of frequency domain. In addition, ISNO antennas show signal transmission above 1.70 GHz with a return loss value of 28 dB and voltage standing wave ratios of 1.20. The range of frequencies over which the antenna performs well (bandwidth) extends from 1.54 to 1.80 GHz. Practical tests of one‐port and two‐port reflection/transmission using a network analyzer operative in the frequency domain of 0.01–6.0 GHz highlight the system's differing isolation and coupling characteristics at 2.43 and 6.0 GHz, respectively. The high levels of isolation at 6.0 GHz assure the suitability of the system for applications requiring minimal reverse transmission and high signal integrity. The NC effect, wide bandwidth, and high signal isolation characteristics are preferable in electronics and 5 G/6 G networks.

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Anomalous photovoltaic behavior under illumination of γ - In2Se3 nanostructures used as hole transport layer in organic solar cell

et al. 2022

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A predicted non-layered phase of In2Se3 by first principles

Cited by 5 publications

References 43 publications

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Deposited Pt/InSe/Nb₂O₅/Ag Stacked Layers Designed as Negative Capacitance Sources and Antennas for 5 G/6 G Networks

Anomalous photovoltaic behavior under illumination of γ - In2Se3 nanostructures used as hole transport layer in organic solar cell

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A predicted non-layered phase of In2Se3 by first principles

Cited by 5 publications

References 43 publications

Thermally Tunable Analog Memristive Behaviors in Sulfurized In2Se3 Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Tunable Analog Memristive Behaviors in Sulfurized In2Se3 Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Deposited Pt/InSe/Nb2O5/Ag Stacked Layers Designed as Negative Capacitance Sources and Antennas for 5 G/6 G Networks

Anomalous photovoltaic behavior under illumination of γ - In2Se3 nanostructures used as hole transport layer in organic solar cell

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Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Deposited Pt/InSe/Nb₂O₅/Ag Stacked Layers Designed as Negative Capacitance Sources and Antennas for 5 G/6 G Networks