A preliminary investigation into hybrid photovoltaic cells with organic phthalocyanines and amorphous silicon heterojunction

Zhao, Huan; He, Zhiqun; Zhang, Xiaojin; Zhang, Zhi; Diyaf, Adel; Lind, Anna H N; Liang, Chunjun; Wilson, J.I.B.

doi:10.1088/0022-3727/48/19/195102

Cited by 9 publications

(4 citation statements)

References 68 publications

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“…Because of their unique optical, electronic, and magnetic properties, transition metal phthalocyanines (TMPcs) have been extensively investigated. , A broad variety of applications of metal phthalocyanines are known, among them optoelectronic devices, − in which the electronic structure in thin films is of particular importance. Most recently, magnetic properties came in the focus of interest for future applications in quantum information processing and organic spintronics. − …”

Section: Introductionmentioning

confidence: 99%

Influence of the Fluorination of Iron Phthalocyanine on the Electronic Structure of the Central Metal Atom

et al. 2021

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The electronic structure of the central Fe ion of iron phthalocyanine (FePc) and perfluorinated iron phthalocyanine (FePcF 16 ) in thin films is investigated by X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD), supported by photoemission. Both molecules grow in a flat-lying adsorption geometry in thin films. Fe L-edge X-ray absorption spectra of FePc and FePcF 16 exhibit minor, but distinct, differences of the shape, indicating a different electronic structure. A significantly stronger XMCD signal and thus larger magnetic moments were observed for FePc compared to FePcF 16 at low temperatures (15 K). Multiplet calculations have been used to simulate the XA and XMCD spectra and give detailed insight into the electronic structure of Fe in FePc and FePcF 16 . We suppose that the electronic structure crucially depends on the detailed arrangement of FePc and FePcF 16 molecules in thin films.

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Section: Introductionmentioning

confidence: 99%

Influence of the Fluorination of Iron Phthalocyanine on the Electronic Structure of the Central Metal Atom

et al. 2021

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“…The diversity of technologies for solar-energy production is considerable and includes photovoltaic cells that can be manufactured from inorganic compounds, such as gallium arsenide, cadmium sulfide, and silicon. However, these technologies require expensive equipment and generate highly-polluting residues [7,8,9]. A viable strategy to generate sustainable energy and reduce some of the aforementioned environmental problems should consider the replacement of silicon and inorganic semiconductors through the development of organic semiconductors that permit new approaches for the production of photovoltaic devices [10].…”

Section: Introductionmentioning

confidence: 99%

CuPc: Effects of its Doping and a Study of Its Organic-Semiconducting Properties for Application in Flexible Devices

et al. 2019

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This study refers to the doping of organic semiconductors by a simple reaction between copper phthalocyanine and tetrathiafulvalene or tetracyanoquinodimethane. The semiconductor films of copper phthalocyanine, doped with tetrathiafulvalene donor (CuPc-TTF) and tetracyanoquinodimethane acceptor (CuPc-TCNQ) on different substrates, were prepared by vacuum evaporation. The structure and morphology of the semiconductor films were studied with infrared (IR) spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The absorption spectra for CuPc-TTF, recorded in the 200–900 nm UV–vis region for the deposited films, showed two peaks: a high energy peak, around 613 nm, and a second one, around 695 nm, with both peaks corresponding to the Q-band transition of the CuPcs. From the spectra, it can also be seen that CuPc-TTF has a B-band at around 330 nm and has a bandgap of approximately 1.4 eV. The B-band in the CuPc-TCNQ spectrum is quite similar to that of CuPc-TTF; on the other hand, CuPc-TCNQ does not include a Q-band in its spectrum and its bandgap value is of approximately 1.6 eV. The experimental optical bandgaps were compared to the ones calculated through density functional theory (DFT). In order to prove the effect of dopants in the phthalocyanine semiconductor, simple devices were manufactured and their electric behaviors were evaluated. Devices constituted by the donor-acceptor active layer and by the hollow, electronic-transport selective layers, were deposited on rigid and flexible indium tin oxide (ITO) substrates by the vacuum sublimation method. The current–voltage characteristics of the investigated structures, measured in darkness and under illumination, show current density values of around 10 A/cm2 for the structure based on a mixed-PET layer and values of 3 A/cm2 for the stacked-glass layered structure. The electrical properties of the devices, such as carrier mobility (μ) were obtained from the J–V characteristics. The mobility values of the devices on glass were between 1.59 × 109 and 3.94 × 1010 cm2/(V·s), whereas the values of the devices on PET were between 1.84 × 109 and 4.51 × 109 cm2/(V·s). The different behaviors of the rigid and flexible devices is mainly due to the effect of the substrate.

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“…The metallophthalocyanines (MPcs) are MSCs widely studied in the manufacture of optoelectronic devices due to their excellent photoactive and photovoltaic properties, in addition to their high thermal and chemical stability. Although over 70 metallic and no metallic ions will fit into the phthalocyanine cavity and many of these MPc complexes have been used in electronic devices, Cu and Zn are the most common choices to date to be used in MPc-based electronic devices [1,11,12]. The presence of heavy metallic atoms, with valence electrons located in p orbitals as in the case of indium has been little studied and it is worth to consider that depending on the nature of the central metal atom MPc exhibit markedly different device performance [12,13].…”

Section: Introductionmentioning

confidence: 99%

“…The above with the purpose of minimizing the possible loss of current in the devices due to the presence of charge extraction or injection barriers between the electrodes and the phthalocyanine. The behavior of the In(III)PcCl was evaluated through the manufacture and characterization of devices constituted by MSCs widely known for their behavior in optoelectronic devices [1,[8][9][10][11][12]. The presence of these MSCs allowed differentiating and determining the behavior of the In(III)PcCl, considering also its integration as FHJ active layer constituent and as BHJ constituent in devices.…”

Section: Introductionmentioning

confidence: 99%

The Effect of the Indium(III) Phthalocyanine Chloride Films on the Behavior of Flexible Devices of Flat and Disperse Heterojunction

et al. 2019

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By means of flat-heterojunction structures based on small semiconductor molecules (MSCs), an analysis of the indium(III) phthalocyanine chloride (In(III)PcCl) film as a constituent of optoelectronic devices was performed. The study included the behavior of In(III)PcCl playing three different roles: a donor species, an electronic acceptor, and a hole layer carrier. The flat-heterojunction structures were prepared by vacuum deposition method that permits a controlled layer-by-layer growth of high purity films. The investigated structures were characterized by scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), UV-vis spectroscopy and optical bandgaps were obtained by Tauc's and Cody's methods. As the structures exhibit a large spectral absorption in the visible range, they were incorporated into flat-heterojunction devices based on flexible and rigid substrates. However, during the synthesis of those structures, the disperse heterojunction arrangement was found and indeed it showed to be more efficient than the initial flat-heterojunction. In order to complement these results, disperse heterojunction arrangement structure as well as its bandgap value were obtained by DFT calculations. Finally, the electronic behavior of both fabricated devices, disperse heterojunction and flat-heterojunction were compared.

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A preliminary investigation into hybrid photovoltaic cells with organic phthalocyanines and amorphous silicon heterojunction

Cited by 9 publications

References 68 publications

Influence of the Fluorination of Iron Phthalocyanine on the Electronic Structure of the Central Metal Atom

Influence of the Fluorination of Iron Phthalocyanine on the Electronic Structure of the Central Metal Atom

CuPc: Effects of its Doping and a Study of Its Organic-Semiconducting Properties for Application in Flexible Devices

The Effect of the Indium(III) Phthalocyanine Chloride Films on the Behavior of Flexible Devices of Flat and Disperse Heterojunction

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