A problem-specific inverse method for two-dimensional doping profile determination from capacitance-voltage measurements

Ouwerling, G.J.L.

doi:10.1016/0038-1101(91)90090-l

Cited by 11 publications

(2 citation statements)

References 28 publications

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“…In addition, the different environments will affect the electric field distribution, resulting in difficulty in the calculation of the capacitance matrix, making the calculation difficult. Thus, the voltage solving method using the electromagnetic field inverse problem has some application limitations, as it is limited by the numerical calculation theory and method of the electromagnetic field, as well as the application conditions of the computers involved, and the D-dot sensor voltage measurement system is still challenged by voltage solving difficulties and poor accuracy [ 7 , 8 , 9 ]. To solve these problems, an integral algorithm is introduced into the D-dot sensor voltage measurement system.…”

Section: Introductionmentioning

confidence: 99%

Research on Transmission Line Voltage Measurement Method of D-Dot Sensor Based on Gaussian Integral

Wang

Zhao

et al. 2018

Sensors

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D-dot sensors meet the development trend towards the downsizing, automation and digitalization of voltage sensors and is one of research hotspots for new voltage sensors at present. The traditional voltage measurement system of D-dot sensors makes possible the reverse solving of wire potentials according to the computational principles of the electric field inverse problem by measuring electric field values beneath the transmission line. Nevertheless, as it is limited by the solving method of the electric field inverse problem, the D-dot sensor voltage measurement system is struggling with solving difficulties and poor accuracy. To solve these problems, this paper suggests introducing a Gaussian integral into the D-dot sensor voltage measurement system to accurately measure the voltage of transmission lines. Based on studies of D-dot sensors, a transmission line voltage measurement method based on Gaussian integrals is proposed and used for the simulation of the electric field of a 220 kV and a 20 kV transmission line. The feasibility of the introduction of the Gaussian integral to solve transmission line voltage was verified by the simulation results. Finally, the performance of the Gaussian integral was verified by an experiment using the transmission line voltage measurement platform. The experimental results demonstrated that the D-dot sensor measurement system based on a Gaussian integral achieves high accuracy and the relative error is lower than 0.5%.

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Section: Introductionmentioning

confidence: 99%

Research on Transmission Line Voltage Measurement Method of D-Dot Sensor Based on Gaussian Integral

Wang

Zhao

et al. 2018

Sensors

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show abstract

“…The most widely used technique in the semiconductor community is the so-called C-V technique, proposed initially by Kennedy, Murley and Kelinfelder in [36,37] and have been extensively studied since then [24,34,47,48,58,[61][62][63]66,67]. The underline mathematical model for the C-V technique is a one-dimensional drift-diffusion-Poisson system; see (6) below for a simplified multi-dimensional version.…”

Section: Introductionmentioning

confidence: 99%

Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model

Cheng

Gamba

Ren

2011

Journal of Computational Physics

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A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels

Jiménez-Tejada

López‐Villanueva

Cartujo

et al. 1992

Solid-State Electronics

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A problem-specific inverse method for two-dimensional doping profile determination from capacitance-voltage measurements

Cited by 11 publications

References 28 publications

Research on Transmission Line Voltage Measurement Method of D-Dot Sensor Based on Gaussian Integral

Research on Transmission Line Voltage Measurement Method of D-Dot Sensor Based on Gaussian Integral

Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model

A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels

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