“…The modeling of transport of free conduction electrons and holes in semiconductor devices has been well studied in recent decades [1,31,35,41,44,61,77,79]. Many different models have been proposed, such as the Boltzmann-Poisson system [6,13,17,20,27,43,44,60,67,74], the energy transport system [23,30,44] and the drift-diffusion-Poisson system [2,14,22,21,44,61,73,75,80,83,84]. For the purpose of computational efficiency, we employ the reaction-drift-diffusion-Poisson model in this work.…”