2011
DOI: 10.1016/j.jcp.2011.01.034
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Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model

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Cited by 26 publications
(26 citation statements)
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“…Theorem 1. Let T > 0 and define Σ as in (9). Assume J , J k are Lipschitz continuous, have at most linear asymptotic growth and have sufficiently high derivatives.…”
Section: Stochastic Gradient Descent Methodsmentioning
confidence: 99%
“…Theorem 1. Let T > 0 and define Σ as in (9). Assume J , J k are Lipschitz continuous, have at most linear asymptotic growth and have sufficiently high derivatives.…”
Section: Stochastic Gradient Descent Methodsmentioning
confidence: 99%
“…The modeling of transport of free conduction electrons and holes in semiconductor devices has been well studied in recent decades [1,31,35,41,44,61,77,79]. Many different models have been proposed, such as the Boltzmann-Poisson system [6,13,17,20,27,43,44,60,67,74], the energy transport system [23,30,44] and the drift-diffusion-Poisson system [2,14,22,21,44,61,73,75,80,83,84]. For the purpose of computational efficiency, we employ the reaction-drift-diffusion-Poisson model in this work.…”
Section: Transport Of Electrons and Holesmentioning
confidence: 99%
“…However, a long standing challenge of the reconstruction process centers around the stability issue. If the injected photons carry low energy, the resulting images are very blurred, and the reconstruction is typically unstable [9,10,17,18,29,31]. This phenomenon is the so-called diffuse optical tomography, especially when the injected light is near-infrared.…”
Section: Introductionmentioning
confidence: 99%