2004
DOI: 10.1016/j.physb.2004.03.091
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A procedure for calculating the many-particle Bohm quantum potential

Abstract: In a recent work, M.Kohout (M. Kohout, Int.J.Quant.Chem. 87, 12 2002) raised the important question of how to make a correct use of Bohm's approach for defining a quantum potential. In this work, by taking into account Kohout's results, we propose a general self-consistent iterative procedure for solving this problem.

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Cited by 8 publications
(1 citation statement)
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“…The length of SiNWs was fixed at 1 m. The other principal parameters are shown in Table I calculated using the light intensity distribution at each mesh point obtained by the finite difference time domain (FDTD) method. To introduce the quantum effect into the electrical transport in SiNW solar cells, the Bohm quantum potential (BQP) method [16][17][18][19] was adopted, which has been used for the quantum device simulation of fin field-effect transistors (FinFETs) 20,21) and silicon quantum dots solar cells 22) among others. In the BQP method, the transport of carriers is influenced by the total of the potential characterizing the system (V ) and quantum potential (ÀQ).…”
Section: Methodsmentioning
confidence: 99%
“…The length of SiNWs was fixed at 1 m. The other principal parameters are shown in Table I calculated using the light intensity distribution at each mesh point obtained by the finite difference time domain (FDTD) method. To introduce the quantum effect into the electrical transport in SiNW solar cells, the Bohm quantum potential (BQP) method [16][17][18][19] was adopted, which has been used for the quantum device simulation of fin field-effect transistors (FinFETs) 20,21) and silicon quantum dots solar cells 22) among others. In the BQP method, the transport of carriers is influenced by the total of the potential characterizing the system (V ) and quantum potential (ÀQ).…”
Section: Methodsmentioning
confidence: 99%