A Proposal for a Novel Hybrid Interconnect Technology for the End of Roadmap

Pan, Chenyun; Naeemi, Azad

doi:10.1109/led.2013.2291783

Cited by 49 publications

(27 citation statements)

References 9 publications

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“…Simulations within the Mayadas-Shatzkes model showed that the much shorter MFP of Ru and Ir was indeed responsible for the much weaker thickness dependence of the thin film resistivity. This confirms earlier predictions [27,37,38] and justifies the usage of (λρ 0 ) −1 as a figure of merit of alternative metals for beyond-Cu interconnects [34,36], in particular with respect to the the expected scaling behavior. Indeed, PGMs-and in particular Ruhave recently shown excellent prospects to replace Cu in future nanoscale interconnects with scaled widths of 10 nm and below [41,[75][76][77][78].…”

Section: Discussionsupporting

confidence: 89%

“…As discussed above, metals with short MFPs may be less sensitive to surface or grain boundary scattering and thus may show a weaker thickness dependence of the resistivity than Cu [27,37,38]. As indicated in Tab.…”

Section: Group Metalsmentioning

confidence: 97%

“…From a more fundamental point of view, these data raise the question of the material dependence of the thin film scattering contributions, such as surface and grain boundary scattering. It has been asserted that a shorter electron MFP leads to a weaker thickness dependence of both surface and grain boundary scattering [27,37,38]. However, to confirm this argument, effects of potentially different microstructures (e.g.…”

Section: Metal Thin Filmsmentioning

confidence: 99%

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Thickness dependence of the resistivity of platinum-group metal thin films

Dutta

Sankaran

Moors

et al. 2017

Journal of Applied Physics

163

108

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We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinumgroup thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas-Shatzkes model [Phys. Rev. B 1, 1382(1970] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO 2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas-Shatzkes model in consideration of the experimental findings.

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Section: Discussionsupporting

confidence: 89%

Section: Group Metalsmentioning

confidence: 97%

Section: Metal Thin Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Thickness dependence of the resistivity of platinum-group metal thin films

Dutta

Sankaran

Moors

et al. 2017

Journal of Applied Physics

163

108

View full text Add to dashboard Cite

show abstract

“…To cope with such issues, alternative conductive materials with low resistivity and high ampacity are highly required for interconnect applications . Graphene, a two‐dimensional carbon material with a honeycomb lattice, has been proposed as a promising interconnect material in future nanoscale integrated circuits (ICs) .…”

Section: Introductionmentioning

confidence: 99%

“…2 To cope with such issues, alternative conductive materials with low resistivity and high ampacity are highly required for interconnect applications. [3][4][5][6] Graphene, a two-dimensional carbon material with a honeycomb lattice, has been proposed as a promising interconnect material in future nanoscale integrated circuits (ICs). 7 To reduce large resistance of a monolayer graphene nanoribbon (GNR), multilayer GNR has been demonstrated to be superior to their Cu counterparts for intermediate and global level interconnect applications.…”

Section: Introductionmentioning

confidence: 99%

Optimal repeater insertion for horizontal and vertical graphene nanoribbon interconnects

Zhao

Liu

et al. 2019

Int J Numerical Modelling

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A comparative study on the repeater insertion designs in horizontal and vertical graphene nanoribbon (GNR) interconnects is presented. The optimal numbers and sizes of repeaters are calculated by using the particle swarm optimization algorithm, and then the results are employed to train back-propagation neural networks.By virtue of the trained neural networks, the optimal repeater designs can be quickly conducted for the GNR interconnects. The proposed optimal repeater design approach is more flexible and more adaptive than conventional analytical methods. By utilizing the proposed approach, it is found that the vertical GNR interconnects need less repeaters yet result in better performance than their horizontal counterparts. K E Y W O R D Shorizontal graphene nanoribbon, power-delay product, repeater insertion, time delay, vertical graphene nanoribbon

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Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

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Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.

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A Proposal for a Novel Hybrid Interconnect Technology for the End of Roadmap

Cited by 49 publications

References 9 publications

Thickness dependence of the resistivity of platinum-group metal thin films

Thickness dependence of the resistivity of platinum-group metal thin films

Optimal repeater insertion for horizontal and vertical graphene nanoribbon interconnects

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

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