We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinumgroup thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas-Shatzkes model [Phys. Rev. B 1, 1382(1970] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO 2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas-Shatzkes model in consideration of the experimental findings.

We consider the impact of disorder on the spectrum of three-dimensional nodal-line semimetals. We show that the combination of disorder and a tilted spectrum naturally leads to a non-Hermitian self-energy contribution that can split a nodal line into a pair of exceptional lines. These exceptional lines form the boundary of an open and orientable bulk Fermi ribbon in reciprocal space on which the energy gap vanishes. We find that the orientation and shape of such a disorder-induced bulk Fermi ribbon is controlled by the tilt direction and the disorder properties, which can also be exploited to realize a twisted bulk Fermi ribbon with nontrivial winding number. Our results put forward a paradigm for the exploration of non-Hermitian topological phases of matter. arXiv:1810.03191v2 [cond-mat.mes-hall]

We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10.Comment: 19 pages, 5 figure