A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films

Abstract

Articles you may be interested inSpectroscopic characterization of stress-induced leakage current in sub 5-nm-thick silicon oxide film Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss

Direct tunneling effective mass of electrons determined by intrinsic charge-up process

“…due to strain) and electron-phonon interaction within SiO 2 . The latter have been predicted for d SiO 2 > 3:5 nm [17]. With E kin !…”

Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss

“…Many efforts have been made to clarify the origin of SILC; [3][4][5][6][7][8][9][10] in fact, stressinduced neutral traps resulting from the hydrogen release of hot electrons was found to be the cause of SILC. 8,11 It is generally believed that SILC is a mechanism having electrons tunneling through the oxide film by a two-step tunneling process, i.e., electrons generated from the cathode ͑metal or polysilicon͒ are first captured by stress-generated traps and then immediately emitted by these traps to reach the anode ͑Si substrate͒. This is the trap-assisted tunneling ͑TAT͒ process, which has been widely used to explain the conduction mechanism of both SILC and trapped oxides ͑i.e., SiON films͒.…”

“…The energy loss was dependent on the position of traps in their model. Endoh et al 8 used energy loss to propose an analytical inelastic TAT model. The trap location and sheet charge density of traps were quantitatively analyzed.…”

“…Moreover, for SILC, a previous model in conjunction with Gaussian-distributed traps in space 15 was demonstrated to accurately simulate the I -V curves. Based on the considerations mentioned above, trap energy levels ͑i.e., shallow and deep levels͒, Gaussian-distributed traps ͑which are neutral traps͒, 8 and energy loss ͑or energy relaxation͒ for electrons are all included in our proposed SILC model. This model reveals the inelastic tunneling (E loss 0 eV) behavior for electrons, which is different from our previously proposed model (E loss ϭ0 eV).…”

The charge transport mechanism and electron trap nature in thermal oxide on silicon

“…This phenomenon is called Stress Induced Leakage Current (SILC) [4][5][6][7] . Despite the fact that SILC is studied widely, both experimentally and theoretically [15][16][17][18] , the nature of the defects responsible for SILC and charge transport mechanism are still debatable questions. The purposes of the present study are identification of the ionization mechanism of electron traps in SiO 2 in external electric field and determination of the trap parameters a) Electronic mail: damir@isp.nsc.ru b) Electronic mail: oorlov@mikron.ru (ionization energy, concentration).…”