1998
DOI: 10.1109/16.678498
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A quasi-two-dimensional HEMT model for DC and microwave simulation

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Cited by 28 publications
(12 citation statements)
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“…Reported HFET dc models include empirical models [7,8], two-dimensional multiphysics solvers [9,10], and compact physics-based models [11][12][13][14][15][16]. Compact equivalent circuit models are suitable for simulating HFET circuits, but not before the HFET devices have been fabricated.…”
Section: Introductionmentioning
confidence: 99%
“…Reported HFET dc models include empirical models [7,8], two-dimensional multiphysics solvers [9,10], and compact physics-based models [11][12][13][14][15][16]. Compact equivalent circuit models are suitable for simulating HFET circuits, but not before the HFET devices have been fabricated.…”
Section: Introductionmentioning
confidence: 99%
“…[9][10][11] The channel is divided into N equal parts, the length of each equal part is x = L g/N , where L g is the gate length. The electric potentials at the source and drain ends of the channel are respectively given by…”
Section: Resultsmentioning
confidence: 99%
“…They are based on the accurate description of the carrier transport along a fixed direction, namely the source-drain axis for example in the case of an MESFET. A simplified modeling is used to at best describe the 2D effects resulting from the third terminal (the depleted region under the gate for an FET) [16,17].…”
Section: The Existing Softwarementioning
confidence: 99%