A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics

Abstract

In this work, the electrical characteristics of Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor devices under radiation are studied. The measured I-V curves indicate that this type of device has excellent stability and uniformity after radiation with a total ionization dose of 59.5 krad. The electrical properties of this post-irradiation memristor change slightly at a high temperature of 200 °C. These features enable our fabricated memristor devices operate as electronic (or artificial) synapses for neuromorphic computing or artificial intelligence in harsh electronics. The conductance of the device can be adjusted continuously like the synaptic weight, which lays the foundation for the electronic synapse. The temperature dependence of I-V characteristics before and after radiation is in good agreement with the hopping conduction mechanism. The activation energy is lower and the trap spacing is shorter after a total ionization dose of 59.5 krad irradiation. Moreover, the existence of oxygen vacancies is observed by XPS (X-ray photoelectron spectroscopy). The highly stable nature of this Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device under radiation indicates its great potential in harsh electronics for aerospace, nuclear, and military applications.

Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing

“…In addition, many methods have been used to improve the repeatability and switching speed of RRAM MD. The dual oxide stack structure is an effective method to enhance the stability, repeatability, and switching speed of these devices due to the bilayer interface diffusion effect and insertion of the insulating layer and the trap layer . However, the reliability of the double-layer oxide MDs must be further improved.…”

Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration

“…On the other hand, the Ta oxide layer displays a stochiometry ranging from TaO 2.33 close the interface with the Ti oxide to TaO 3 close to the bottom Pt electrode. We notice that memristors with graded chemical composition and reliable behavior were reported in the literature [32,33].…”

Vacancy-induced resistive switching and synaptic behavior in flexible BST@Cf memristor crossbars

“…During the RESET process, the resistance is switched back to the HRS. It is worth noting that unlike most memristors, which require extra large voltage as electroforming stimuli [3][4][5][6], there are no electroforming voltage required over the period of the switching process.…”

“…Memristors are considered to be promising candidates for replacing existing silicon based electronic components allowing for alternatives to von Neumann architecture. This is attributed to their excellent characteristics such as being highly scalable, with low power consumption, a fast response rate, excellent cyclability and possessing a non-volatile memory [4][5][6][7][8][9][10][11][12][13][14]. Moreover, memristors have very similar characteristics to the learning and memory processes of the human synapse.…”