Vacancy-induced resistive switching and synaptic behavior in flexible BST@Cf memristor crossbars

Abstract

In this study, carbon fibers (Cf) coated with Ba0.6Sr0.4TiO3 (BST) (BST@Cf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical 2 properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 10 6 . The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F-N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule.The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.

Fiber Crossbars: An Emerging Architecture of Smart Electronic Textiles

“…The postsynaptic current continuously increased by sweeping the memristor from 0 to +1.5 V voltage for 10 3 cycles or by a programmable continuous pulse, indicating its potential as a synaptic electronic device for neuromorphic computing. [60] [21] Copyright 2020, Elsevier. b) Schematic diagram of FC-based interfacial type memristor synapse using Ba 0.6 Sr 0.4 TiO 3 -coated carbon fibers as memristive layers.…”

“…[ 58 ] For the interfacial type, both electrodes are electrochemically inert, and resistance switching occurs through Schottky emission and Fowler–Nordheim tunneling. [ 59 ] The memristive layer is generally made of n‐type oxides such as TiO 2 [ 59 ] and barium strontium titanate, [ 60 ] which acts as a donor. During switching, the density of oxygen vacancies inside the memristive layer affects the resistance state of the memristor.…”

“…b) Schematic diagram of FC-based interfacial type memristor synapse using Ba 0.6 Sr 0.4 TiO 3 -coated carbon fibers as memristive layers. Reproduced with permission [60]. Copyright 2020, Elsevier.…”

Research Progress of Biomimetic Memristor Flexible Synapse

“…Memristors have been widely used in information storage and neu Although artificial synaptic devices are developed to a certain extent, the structure and performance of the devices still need to be improved [117]. Reducing the size of the device, reducing the energy consumption, and improving its stability are still the primary focuses and difficulties of the research.…”

Modeling and Synaptic Behaviors of a WOx‐Based Memristor with Oxygen Vacancy Conductive Mechanism

“…[1] After a long time, memristor was first discovered in physical form by a team from HP research labs. [2] Owing to their unique device properties, memristor has been widely proposed for use in many novel memories, [3][4][5][6] logic, [7] synaptic computation and neuromorphic systems, [8][9][10][11] signal processing and circuit design, [12] etc. Memristor-based neuromorphic systems are particularly interesting because we can use them to simulate the function of synapses in brain tissue.…”