A Raman spectroscopy study of InN

Kuball, Martin; Pomeroy, James W.; Wintrebert-Fouquet, M.; Butcher, Ken; Lu, Hai; Schaff, William J.

doi:10.1016/j.jcrysgro.2004.05.034

Cited by 39 publications

(17 citation statements)

References 19 publications

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“…X-ray diffraction of InN on TiO2 showing InN crystallinity.Optical band gap determination for the InN/TiO2 bilayer after annealing Plot of the square root of the optical absorption times the photon energy vs. photon energy for determining the optical band gap of the InN/TiO 2 bilayer after sintering to 400 ºC. The Raman spectroscopy of InN samples that are metallic in appearance shows that the samples are crystalline InN, not metal, showing similar peaks to the literature values[6,7]: The optical band gap determination of red-brown InN samples on a glass substrate is shown below(Figure 4):Optical band gap determination for InN sputtered without a Plot of the square root of the optical absorption times the photon energy vs. photon energy for determining the optical band gap of InN deposited without a heat source.This graph shows an optical band gap of approximately 1.1 eV for InN sputtered onto a room temperature substrate.…”

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confidence: 69%

Thin Film InN/Anatase Bilayers as a Substitute Dye/Semiconductor Interface for Solar Cells

Hoy

Kordesch

2008

MRS Proc.

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The electronic properties of an InN/anatse-TiO 2 bilayer, proposed as a replacement for the dye/semi-conductor interface in Dye Sensitized Solar Cell[1, 2], are measured. RF sputtered thin films of TiO 2 and InN are used as the "dye" replacement. . Two types of InN film are prepared: polycrystalline samples deposited at high temperature, with an optical band gap of < 1 eV, and as-deposited (at least partially amorphous) samples with an optical band gap >1 eV. Energy Dispersive X-ray fluorescence, X-ray Diffraction, and Raman spectroscopy are used to characterize the samples. The sample resistance is measured in the dark and under illumination. The samples deposited at high temperature are crystalline and have a sheet resistivity ≈ 4 Ω /□, and display no photoconductivity. The partially amorphous samples have sheet resistivity of ≈ 500Ω/□. Since both types of InN films, including high quality (based on band gap) polycrystalline InN, do not show increased conductivity with light, we conclude that a solar cell based on an InN/TiO 2 bilayer is not feasible.

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confidence: 69%

Thin Film InN/Anatase Bilayers as a Substitute Dye/Semiconductor Interface for Solar Cells

Hoy

Kordesch

2008

MRS Proc.

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“…The spectra are featured by two broad peaks centered at 480 and 575 cm À 1 . These peaks can be attributed to E 2 (high) and A 1 (LO) phonon modes [21,22]. The origin of such a large broadening in A 1 (LO) is the coupling of free electron oscillation (plasmon) with the LO phonons [22], meaning this feature is no longer a pure phonon mode but a LO phonon-plasmon coupled mode (LOPC).…”

Section: Methodsmentioning

confidence: 99%

Surface and bulk electronic properties of low temperature synthesized InN microcrystals

Barick

Dhar

2015

Journal of Crystal Growth

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“…Kuball et al observed a Raman resonance related only to InN phonons at ∼1.5 ± 0.3 eV for Cornell grown MBE InN. This indicates the presence of transitions around this energy [156]. Nag [157] has pointed out that the 0.07 effective electron mass ratio for low carrier concentration InN is too high to be consistent with a 0.6-0.7 eV bandgap and indeed this value is more consistent with a 1.2 eV band-gap.…”

Section: Other Evidence For Higher Band-gap Innmentioning

confidence: 99%

“…Anderson et al [80] grew polycrystalline InN with ∼0.8 eV luminescence present but did not identify the size of polycrystalline grains; similarly, Kuball et al [94] observed ∼0.85 eV PL from polycrystalline RPECVD grown InN, while, as shown in Fig. 3, a weak room temperature ∼0.7 eV PL emission [95] has been observed for a polycrystalline RF sputtered InN sample with a band-gap, measured by absorption techniques, of 1.9 eV.…”

Section: Quantum Size Effectsmentioning

confidence: 99%